Reliable mobility evaluation of organic field-effect transistors with different contact metals

  • Fanming Huang
  • , Ao Liu
  • , Huihui Zhu
  • , Yong Xu*
  • , Francis Balestra
  • , Gerard Ghibaudo
  • , Yong Young Noh
  • , Junhao Chu
  • , Wenwu Li
  • *Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

16 Scopus citations

Abstract

The reliability of mobility evaluation of organic field-effect transistors (OFETs) is a serious issue because numerous overestimated and underestimated mobilities have been reported recently. A reliable approach to accurately evaluate the OFET mobility is therefore highly desirable. Here, in this letter, two commonly employed methods and the Y function method (YFM) were used to extract the mobilities of indacenodithiophene-co-benzothiadiazole (IDT-BT) OFETs with four different contact metals. The mobilities extracted by the commonly used methods varied greatly with the contact metal and channel length, whereas those extracted by the YFM were very stable and approached the intrinsic mobility of IDT-BT. Our results show that YFM is a precise approach that can be widely used to evaluate the OFET mobility.

Original languageEnglish
Article number8651339
Pages (from-to)605-608
Number of pages4
JournalIEEE Electron Device Letters
Volume40
Issue number4
DOIs
StatePublished - Apr 2019

Keywords

  • Characterization
  • contact resistance
  • mobility
  • organic field-effect transistor

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