Relaxed wear leveling approach for non-volatile memories

Cheng Ji; Liang Shi

doi:10.1109/TENCON.2013.6718968

Relaxed wear leveling approach for non-volatile memories

Cheng Ji
, Liang Shi^*

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

In this paper, we develop a novel wear leveling approach, Relaxed Wear Leveling, for non-volatile memories by exploiting the large number of wear cycles. All memory units of the non-volatile memories are worn for a predefined number of times before they are enrolled in wear leveling.

Original language	English
Title of host publication	2013 IEEE International Conference of IEEE Region 10, IEEE TENCON 2013 - Conference Proceedings
DOIs	https://doi.org/10.1109/TENCON.2013.6718968
State	Published - 2013
Externally published	Yes
Event	2013 IEEE International Conference of IEEE Region 10, IEEE TENCON 2013 - Xi'an, Shaanxi, China Duration: 22 Oct 2013 → 25 Oct 2013

Publication series

Name	IEEE Region 10 Annual International Conference, Proceedings/TENCON
ISSN (Print)	2159-3442
ISSN (Electronic)	2159-3450

Conference

Conference	2013 IEEE International Conference of IEEE Region 10, IEEE TENCON 2013
Country/Territory	China
City	Xi'an, Shaanxi
Period	22/10/13 → 25/10/13

Access to Document

10.1109/TENCON.2013.6718968

Cite this

@inproceedings{338c61e112fd4718b88cf5a2cc3a55f1,

title = "Relaxed wear leveling approach for non-volatile memories",

abstract = "In this paper, we develop a novel wear leveling approach, Relaxed Wear Leveling, for non-volatile memories by exploiting the large number of wear cycles. All memory units of the non-volatile memories are worn for a predefined number of times before they are enrolled in wear leveling.",

author = "Cheng Ji and Liang Shi",

year = "2013",

doi = "10.1109/TENCON.2013.6718968",

language = "英语",

isbn = "9781479928262",

series = "IEEE Region 10 Annual International Conference, Proceedings/TENCON",

booktitle = "2013 IEEE International Conference of IEEE Region 10, IEEE TENCON 2013 - Conference Proceedings",

note = "2013 IEEE International Conference of IEEE Region 10, IEEE TENCON 2013 ; Conference date: 22-10-2013 Through 25-10-2013",

}

Ji, C & Shi, L 2013, Relaxed wear leveling approach for non-volatile memories. in 2013 IEEE International Conference of IEEE Region 10, IEEE TENCON 2013 - Conference Proceedings., 6718968, IEEE Region 10 Annual International Conference, Proceedings/TENCON, 2013 IEEE International Conference of IEEE Region 10, IEEE TENCON 2013, Xi'an, Shaanxi, China, 22/10/13. https://doi.org/10.1109/TENCON.2013.6718968

TY - GEN

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AU - Ji, Cheng

AU - Shi, Liang

PY - 2013

Y1 - 2013

N2 - In this paper, we develop a novel wear leveling approach, Relaxed Wear Leveling, for non-volatile memories by exploiting the large number of wear cycles. All memory units of the non-volatile memories are worn for a predefined number of times before they are enrolled in wear leveling.

AB - In this paper, we develop a novel wear leveling approach, Relaxed Wear Leveling, for non-volatile memories by exploiting the large number of wear cycles. All memory units of the non-volatile memories are worn for a predefined number of times before they are enrolled in wear leveling.

UR - https://www.scopus.com/pages/publications/84894303781

U2 - 10.1109/TENCON.2013.6718968

DO - 10.1109/TENCON.2013.6718968

M3 - 会议稿件

AN - SCOPUS:84894303781

SN - 9781479928262

T3 - IEEE Region 10 Annual International Conference, Proceedings/TENCON

BT - 2013 IEEE International Conference of IEEE Region 10, IEEE TENCON 2013 - Conference Proceedings

T2 - 2013 IEEE International Conference of IEEE Region 10, IEEE TENCON 2013

Y2 - 22 October 2013 through 25 October 2013

ER -

Relaxed wear leveling approach for non-volatile memories

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