Relationship between defects and optical properties in Er-doped GaN

Shaoqiang Chen; Akira Uedono; Jongwon Seo; Junji Sawahata; Katsuhiro Akimoto

doi:10.1016/j.jcrysgro.2009.01.048

Relationship between defects and optical properties in Er-doped GaN

Shaoqiang Chen^*
, Akira Uedono
, Jongwon Seo
, Junji Sawahata
, Katsuhiro Akimoto

^*Corresponding author for this work

University of Tsukuba

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

The density of the vacancy-type defect in Er doped GaN was measured by positron annihilation spectrometry (PAS) and the correlation between the intensity of the Er-related luminescence was studied. A luminescence peak at 558 nm originating from ⁴S_3/2 to ⁴I_15/2 transition of Er³⁺ was observed in Er-doped GaN. The intensity of the luminescence increased with increasing Er concentration and showed the maximum with the Er concentration of around 4.0 at%. The PAS measurements showed that the vacancy-type defect density increased with increasing Er concentration up to 4 at%, and around 4 at% of Er, the formation of defect complex such as V_Ga-V_N was suggested. The contribution of the defect to the radiative recombination of intra-4f transition of Er is discussed.

Original language	English
Pages (from-to)	3097-3099
Number of pages	3
Journal	Journal of Crystal Growth
Volume	311
Issue number	10
DOIs	https://doi.org/10.1016/j.jcrysgro.2009.01.048
State	Published - 1 May 2009
Externally published	Yes

Keywords

A1. Defects
A1. Doping
A3. Molecular beam epitaxy
B1. Nitrides
B2. Semiconducting III-V materials

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10.1016/j.jcrysgro.2009.01.048

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title = "Relationship between defects and optical properties in Er-doped GaN",

abstract = "The density of the vacancy-type defect in Er doped GaN was measured by positron annihilation spectrometry (PAS) and the correlation between the intensity of the Er-related luminescence was studied. A luminescence peak at 558 nm originating from 4S3/2 to 4I15/2 transition of Er3+ was observed in Er-doped GaN. The intensity of the luminescence increased with increasing Er concentration and showed the maximum with the Er concentration of around 4.0 at\%. The PAS measurements showed that the vacancy-type defect density increased with increasing Er concentration up to 4 at\%, and around 4 at\% of Er, the formation of defect complex such as VGa-VN was suggested. The contribution of the defect to the radiative recombination of intra-4f transition of Er is discussed.",

keywords = "A1. Defects, A1. Doping, A3. Molecular beam epitaxy, B1. Nitrides, B2. Semiconducting III-V materials",

author = "Shaoqiang Chen and Akira Uedono and Jongwon Seo and Junji Sawahata and Katsuhiro Akimoto",

year = "2009",

month = may,

day = "1",

doi = "10.1016/j.jcrysgro.2009.01.048",

language = "英语",

volume = "311",

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journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

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}

TY - JOUR

T1 - Relationship between defects and optical properties in Er-doped GaN

AU - Chen, Shaoqiang

AU - Uedono, Akira

AU - Seo, Jongwon

AU - Sawahata, Junji

AU - Akimoto, Katsuhiro

PY - 2009/5/1

Y1 - 2009/5/1

N2 - The density of the vacancy-type defect in Er doped GaN was measured by positron annihilation spectrometry (PAS) and the correlation between the intensity of the Er-related luminescence was studied. A luminescence peak at 558 nm originating from 4S3/2 to 4I15/2 transition of Er3+ was observed in Er-doped GaN. The intensity of the luminescence increased with increasing Er concentration and showed the maximum with the Er concentration of around 4.0 at%. The PAS measurements showed that the vacancy-type defect density increased with increasing Er concentration up to 4 at%, and around 4 at% of Er, the formation of defect complex such as VGa-VN was suggested. The contribution of the defect to the radiative recombination of intra-4f transition of Er is discussed.

AB - The density of the vacancy-type defect in Er doped GaN was measured by positron annihilation spectrometry (PAS) and the correlation between the intensity of the Er-related luminescence was studied. A luminescence peak at 558 nm originating from 4S3/2 to 4I15/2 transition of Er3+ was observed in Er-doped GaN. The intensity of the luminescence increased with increasing Er concentration and showed the maximum with the Er concentration of around 4.0 at%. The PAS measurements showed that the vacancy-type defect density increased with increasing Er concentration up to 4 at%, and around 4 at% of Er, the formation of defect complex such as VGa-VN was suggested. The contribution of the defect to the radiative recombination of intra-4f transition of Er is discussed.

KW - A1. Defects

KW - A1. Doping

KW - A3. Molecular beam epitaxy

KW - B1. Nitrides

KW - B2. Semiconducting III-V materials

UR - https://www.scopus.com/pages/publications/65749101722

U2 - 10.1016/j.jcrysgro.2009.01.048

DO - 10.1016/j.jcrysgro.2009.01.048

M3 - 文章

AN - SCOPUS:65749101722

SN - 0022-0248

VL - 311

SP - 3097

EP - 3099

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 10

ER -

Relationship between defects and optical properties in Er-doped GaN

Abstract

Keywords

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