Rectifying characteristic of Pt/TiOx/metal/Pt controlled by electronegativity

Ni Zhong; Hisashi Shima; Hiro Akinaga

doi:10.1063/1.3299011

Rectifying characteristic of Pt/TiO_x/metal/Pt controlled by electronegativity

Ni Zhong^*
, Hisashi Shima
, Hiro Akinaga

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

41 Scopus citations

Abstract

Current voltage characteristic of the TiO_x /metal interface has been studied by the systematic investigation on the top electrode (TE) material dependence of the carrier transport through the TiO_x /metal interface. Rather than work function of TE (φ_M), electronegativity (χ_M) of TE plays a dominant role on current conduction and carrier transport of Pt/TiO_x/metal (TE) devices. Pt/ TiO_x /metal (TE) exhibits rectifying property, if χ_M of TE is high. On the other hands, a symmetric I-V curves were observed if χ_M of TE is low. Plots of Schottky barrier at TiO_x /metal (TE) interface versus χ_M of TE provides an index of interface behavior S≈0.55, suggesting partial Fermi-level pinning at TiO _x /metal interface.

Original language	English
Article number	042107
Journal	Applied Physics Letters
Volume	96
Issue number	4
DOIs	https://doi.org/10.1063/1.3299011
State	Published - 2010
Externally published	Yes

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title = "Rectifying characteristic of Pt/TiOx/metal/Pt controlled by electronegativity",

abstract = "Current voltage characteristic of the TiOx /metal interface has been studied by the systematic investigation on the top electrode (TE) material dependence of the carrier transport through the TiOx /metal interface. Rather than work function of TE (φM), electronegativity (χM) of TE plays a dominant role on current conduction and carrier transport of Pt/TiOx/metal (TE) devices. Pt/ TiOx /metal (TE) exhibits rectifying property, if χM of TE is high. On the other hands, a symmetric I-V curves were observed if χM of TE is low. Plots of Schottky barrier at TiOx /metal (TE) interface versus χM of TE provides an index of interface behavior S≈0.55, suggesting partial Fermi-level pinning at TiO x /metal interface.",

author = "Ni Zhong and Hisashi Shima and Hiro Akinaga",

year = "2010",

doi = "10.1063/1.3299011",

language = "英语",

volume = "96",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "4",

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TY - JOUR

T1 - Rectifying characteristic of Pt/TiOx/metal/Pt controlled by electronegativity

AU - Zhong, Ni

AU - Shima, Hisashi

AU - Akinaga, Hiro

PY - 2010

Y1 - 2010

N2 - Current voltage characteristic of the TiOx /metal interface has been studied by the systematic investigation on the top electrode (TE) material dependence of the carrier transport through the TiOx /metal interface. Rather than work function of TE (φM), electronegativity (χM) of TE plays a dominant role on current conduction and carrier transport of Pt/TiOx/metal (TE) devices. Pt/ TiOx /metal (TE) exhibits rectifying property, if χM of TE is high. On the other hands, a symmetric I-V curves were observed if χM of TE is low. Plots of Schottky barrier at TiOx /metal (TE) interface versus χM of TE provides an index of interface behavior S≈0.55, suggesting partial Fermi-level pinning at TiO x /metal interface.

AB - Current voltage characteristic of the TiOx /metal interface has been studied by the systematic investigation on the top electrode (TE) material dependence of the carrier transport through the TiOx /metal interface. Rather than work function of TE (φM), electronegativity (χM) of TE plays a dominant role on current conduction and carrier transport of Pt/TiOx/metal (TE) devices. Pt/ TiOx /metal (TE) exhibits rectifying property, if χM of TE is high. On the other hands, a symmetric I-V curves were observed if χM of TE is low. Plots of Schottky barrier at TiOx /metal (TE) interface versus χM of TE provides an index of interface behavior S≈0.55, suggesting partial Fermi-level pinning at TiO x /metal interface.

UR - https://www.scopus.com/pages/publications/75749095680

U2 - 10.1063/1.3299011

DO - 10.1063/1.3299011

M3 - 文章

AN - SCOPUS:75749095680

SN - 0003-6951

VL - 96

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

M1 - 042107

ER -

Rectifying characteristic of Pt/TiO_x/metal/Pt controlled by electronegativity

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