Recrystallization behavior of high-dose Mn+-implanted GaAs

J. Wang; Z. Li; W. Cai; Z. Miao; P. Chen; X. Chen; W. Lu

doi:10.1007/s00339-002-1960-0

Recrystallization behavior of high-dose Mn⁺-implanted GaAs

J. Wang, Z. Li, W. Cai, Z. Miao, P. Chen, X. Chen, W. Lu

Research output: Contribution to journal › Article › peer-review

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Abstract

Raman spectroscopy was used to study the evolution of host lattice recrystallization in Mn⁺-implanted GaAs. A high dose of Mn⁺-ions (> 10¹⁵ cm^-2) was introduced into semi-insulating GaAs by the combinatorial implantation method. Subsequent thermal annealing at 920 °C was carried out to re-grow the implantation-induced amorphous layers. The dependence of the recrystallization behavior on the Mn content was systematically observed. The lattice orientation of recrystallized layers in the surface changed after high-dose implantation ( > 1.6 × 10¹⁵ cm^-2) and annealing. The size of the recrystallized crystallites decreased with increasing Mn⁺ dose, as indicated by images from atomic force microscopy. The decrease in the phonon frequency of the Raman lines with the size reduction of microcrystals was in good agreement with the spatial correlation model. However, at higher doses ( > 7 × 10¹⁶ cm^-2), a blue shift of the frequency was observed due to the compressive stress exerted on the microcrystals.

Original language	English
Pages (from-to)	975-978
Number of pages	4
Journal	Applied Physics A: Materials Science and Processing
Volume	76
Issue number	6
DOIs	https://doi.org/10.1007/s00339-002-1960-0
State	Published - Apr 2003
Externally published	Yes

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title = "Recrystallization behavior of high-dose Mn+-implanted GaAs",

abstract = "Raman spectroscopy was used to study the evolution of host lattice recrystallization in Mn+-implanted GaAs. A high dose of Mn+-ions (> 1015 cm-2) was introduced into semi-insulating GaAs by the combinatorial implantation method. Subsequent thermal annealing at 920 °C was carried out to re-grow the implantation-induced amorphous layers. The dependence of the recrystallization behavior on the Mn content was systematically observed. The lattice orientation of recrystallized layers in the surface changed after high-dose implantation ( > 1.6 × 1015 cm-2) and annealing. The size of the recrystallized crystallites decreased with increasing Mn+ dose, as indicated by images from atomic force microscopy. The decrease in the phonon frequency of the Raman lines with the size reduction of microcrystals was in good agreement with the spatial correlation model. However, at higher doses ( > 7 × 1016 cm-2), a blue shift of the frequency was observed due to the compressive stress exerted on the microcrystals.",

author = "J. Wang and Z. Li and W. Cai and Z. Miao and P. Chen and X. Chen and W. Lu",

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T1 - Recrystallization behavior of high-dose Mn+-implanted GaAs

AU - Wang, J.

AU - Li, Z.

AU - Cai, W.

AU - Miao, Z.

AU - Chen, P.

AU - Chen, X.

AU - Lu, W.

PY - 2003/4

Y1 - 2003/4

N2 - Raman spectroscopy was used to study the evolution of host lattice recrystallization in Mn+-implanted GaAs. A high dose of Mn+-ions (> 1015 cm-2) was introduced into semi-insulating GaAs by the combinatorial implantation method. Subsequent thermal annealing at 920 °C was carried out to re-grow the implantation-induced amorphous layers. The dependence of the recrystallization behavior on the Mn content was systematically observed. The lattice orientation of recrystallized layers in the surface changed after high-dose implantation ( > 1.6 × 1015 cm-2) and annealing. The size of the recrystallized crystallites decreased with increasing Mn+ dose, as indicated by images from atomic force microscopy. The decrease in the phonon frequency of the Raman lines with the size reduction of microcrystals was in good agreement with the spatial correlation model. However, at higher doses ( > 7 × 1016 cm-2), a blue shift of the frequency was observed due to the compressive stress exerted on the microcrystals.

AB - Raman spectroscopy was used to study the evolution of host lattice recrystallization in Mn+-implanted GaAs. A high dose of Mn+-ions (> 1015 cm-2) was introduced into semi-insulating GaAs by the combinatorial implantation method. Subsequent thermal annealing at 920 °C was carried out to re-grow the implantation-induced amorphous layers. The dependence of the recrystallization behavior on the Mn content was systematically observed. The lattice orientation of recrystallized layers in the surface changed after high-dose implantation ( > 1.6 × 1015 cm-2) and annealing. The size of the recrystallized crystallites decreased with increasing Mn+ dose, as indicated by images from atomic force microscopy. The decrease in the phonon frequency of the Raman lines with the size reduction of microcrystals was in good agreement with the spatial correlation model. However, at higher doses ( > 7 × 1016 cm-2), a blue shift of the frequency was observed due to the compressive stress exerted on the microcrystals.

UR - https://www.scopus.com/pages/publications/0037389439

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DO - 10.1007/s00339-002-1960-0

M3 - 文章

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JO - Applied Physics A: Materials Science and Processing

JF - Applied Physics A: Materials Science and Processing

IS - 6

ER -

Recrystallization behavior of high-dose Mn⁺-implanted GaAs

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