Recent progress on HgCdTe at the national laboratory for infrared physics in China

Junhao Chu; Dingyuan Tang

doi:10.1007/BF02655005

Recent progress on HgCdTe at the national laboratory for infrared physics in China

Junhao Chu^*
, Dingyuan Tang

^*Corresponding author for this work

CAS - Shanghai Institute of Technical Physics

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

The characterization of impurities, defects, uniformity and some fundamental properties for the bulk and epitaxial HgCdTe (MCT) material, undoped and doped with Sb, As, Fe, have been investigated recently in the authors' laboratory by means of photoluminescence, magneto-photoconductivity, quantum capacitance spectroscopy, transport measurements, and other contactless and nondestructive methods such as the infrared, far-infrared, and millimeter wave measurements. This paper reports a portion of these new results.

Original language	English
Pages (from-to)	1176-1182
Number of pages	7
Journal	Journal of Electronic Materials
Volume	25
Issue number	8
DOIs	https://doi.org/10.1007/BF02655005
State	Published - Aug 1996
Externally published	Yes

Keywords

As impurity
Electrical properties
HgCdTe
Lifetimes
Photoluminescence

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10.1007/BF02655005

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abstract = "The characterization of impurities, defects, uniformity and some fundamental properties for the bulk and epitaxial HgCdTe (MCT) material, undoped and doped with Sb, As, Fe, have been investigated recently in the authors' laboratory by means of photoluminescence, magneto-photoconductivity, quantum capacitance spectroscopy, transport measurements, and other contactless and nondestructive methods such as the infrared, far-infrared, and millimeter wave measurements. This paper reports a portion of these new results.",

keywords = "As impurity, Electrical properties, HgCdTe, Lifetimes, Photoluminescence",

author = "Junhao Chu and Dingyuan Tang",

year = "1996",

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AB - The characterization of impurities, defects, uniformity and some fundamental properties for the bulk and epitaxial HgCdTe (MCT) material, undoped and doped with Sb, As, Fe, have been investigated recently in the authors' laboratory by means of photoluminescence, magneto-photoconductivity, quantum capacitance spectroscopy, transport measurements, and other contactless and nondestructive methods such as the infrared, far-infrared, and millimeter wave measurements. This paper reports a portion of these new results.

KW - As impurity

KW - Electrical properties

KW - HgCdTe

KW - Lifetimes

KW - Photoluminescence

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Recent progress on HgCdTe at the national laboratory for infrared physics in China

Abstract

Keywords

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