Recent progress in the study of characterization and properties of HgCdTe at the national laboratory for infrared physics in China

Junhao Chu; Kun Liu; Young Chang; Pulin Liu; Biao Li; Shaoling Guo; Minghui Chen; Dingyuan Tang

doi:10.1117/12.280439

Recent progress in the study of characterization and properties of HgCdTe at the national laboratory for infrared physics in China

Junhao Chu^*, Kun Liu, Young Chang, Pulin Liu, Biao Li, Shaoling Guo, Minghui Chen, Dingyuan Tang

^*Corresponding author for this work

CAS - Shanghai Institute of Technical Physics

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

The characterization of impurities, defects, uniformity and some fundamental properties for the bulk and epitaxial HgCdTe(MCT) material undoped and doped with Sb, As, Fe have been investigated recently in our laboratory by means of photoluminescence, magneto-photoconductivity, quantum capacitance spectroscopy, transport measurements and other contactless and nondestructive methods such as the infrared, far-infrared and millimeter wave measurements. This paper reports a portion of these new results.

Original language	English
Pages (from-to)	30-38
Number of pages	9
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	3182
DOIs	https://doi.org/10.1117/12.280439
State	Published - 1997
Externally published	Yes
Event	Material Science and Material Properties for Infrared Optoelectronics - Uzhgorod, Ukraine Duration: 30 Sep 1996 → 30 Sep 1996

Keywords

HgCdTe
Impurities
Magneto-photoconductivity
Photoluminescence
Quantum capacitance
Refractive index

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10.1117/12.280439

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title = "Recent progress in the study of characterization and properties of HgCdTe at the national laboratory for infrared physics in China",

abstract = "The characterization of impurities, defects, uniformity and some fundamental properties for the bulk and epitaxial HgCdTe(MCT) material undoped and doped with Sb, As, Fe have been investigated recently in our laboratory by means of photoluminescence, magneto-photoconductivity, quantum capacitance spectroscopy, transport measurements and other contactless and nondestructive methods such as the infrared, far-infrared and millimeter wave measurements. This paper reports a portion of these new results.",

keywords = "HgCdTe, Impurities, Magneto-photoconductivity, Photoluminescence, Quantum capacitance, Refractive index",

author = "Junhao Chu and Kun Liu and Young Chang and Pulin Liu and Biao Li and Shaoling Guo and Minghui Chen and Dingyuan Tang",

year = "1997",

doi = "10.1117/12.280439",

language = "英语",

volume = "3182",

pages = "30--38",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

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note = "Material Science and Material Properties for Infrared Optoelectronics ; Conference date: 30-09-1996 Through 30-09-1996",

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TY - JOUR

T1 - Recent progress in the study of characterization and properties of HgCdTe at the national laboratory for infrared physics in China

AU - Chu, Junhao

AU - Liu, Kun

AU - Chang, Young

AU - Liu, Pulin

AU - Li, Biao

AU - Guo, Shaoling

AU - Chen, Minghui

AU - Tang, Dingyuan

PY - 1997

Y1 - 1997

N2 - The characterization of impurities, defects, uniformity and some fundamental properties for the bulk and epitaxial HgCdTe(MCT) material undoped and doped with Sb, As, Fe have been investigated recently in our laboratory by means of photoluminescence, magneto-photoconductivity, quantum capacitance spectroscopy, transport measurements and other contactless and nondestructive methods such as the infrared, far-infrared and millimeter wave measurements. This paper reports a portion of these new results.

AB - The characterization of impurities, defects, uniformity and some fundamental properties for the bulk and epitaxial HgCdTe(MCT) material undoped and doped with Sb, As, Fe have been investigated recently in our laboratory by means of photoluminescence, magneto-photoconductivity, quantum capacitance spectroscopy, transport measurements and other contactless and nondestructive methods such as the infrared, far-infrared and millimeter wave measurements. This paper reports a portion of these new results.

KW - HgCdTe

KW - Impurities

KW - Magneto-photoconductivity

KW - Photoluminescence

KW - Quantum capacitance

KW - Refractive index

UR - https://www.scopus.com/pages/publications/57649083117

U2 - 10.1117/12.280439

DO - 10.1117/12.280439

M3 - 会议文章

AN - SCOPUS:57649083117

SN - 0277-786X

VL - 3182

SP - 30

EP - 38

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Material Science and Material Properties for Infrared Optoelectronics

Y2 - 30 September 1996 through 30 September 1996

ER -

Recent progress in the study of characterization and properties of HgCdTe at the national laboratory for infrared physics in China

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Keywords

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