Abstract
Recent progress of infrared photoreflectance and modulated photolumineseence techniques was outlined with special attention focused on the significant improvement of signal-to-noise ratio, spectral resolution and time consumption relative to the conventional techniques. Application of these techniques to molecular beam epitaxially grown HgCdTe films was given as examples, from which the potential impact of the techniques was foreseen on the optical study of narrow-gap semiconductors and inter-subband transition of wide-gap semiconductors with low-dimensional structures.
| Original language | English |
|---|---|
| Pages (from-to) | 1-6+20 |
| Journal | Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves |
| Volume | 27 |
| Issue number | 1 |
| DOIs | |
| State | Published - Feb 2008 |
Keywords
- Infrared photoreflectance
- Modulated photoluminesence
- Signal-to-noise ratio
- Spectral resolution
- Step-scan FTIR spectrometer