Real time observation of nanoscale multiple conductive filaments in RRAM by using advanced in-situ TEM

J. Sun; X. Wu; Q. Liu; M. Liu; L. T. Sun

doi:10.1109/IPFA.2013.6599223

Real time observation of nanoscale multiple conductive filaments in RRAM by using advanced in-situ TEM

J. Sun, X. Wu, Q. Liu, M. Liu, L. T. Sun

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

5 Scopus citations

Abstract

In this letter, we dynamically investigate the resistive switching characteristics and physical mechanism of the ZrO₂-based device. Using in-situ transmission electron microscopy, we observe in real time that multiple conductive filaments (CFs) are formed across the ZrO₂ layer between top electrode and bottom electrodes after forming. Various top electrode materials have been used, such as Cu, Ag, and Ni. Contrary to common belief, it is found that CF growth begins at the anode, rather than having to reach the cathode and grow backwards. Energy-dispersive X-ray spectroscopy results confirm that metal from the top electrode is the main composition of the CFs.

Original language	English
Title of host publication	Proceedings of the 2013 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2013
Pages	560-562
Number of pages	3
DOIs	https://doi.org/10.1109/IPFA.2013.6599223
State	Published - 2013
Externally published	Yes
Event	2013 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2013 - Suzhou, China Duration: 15 Jul 2013 → 19 Jul 2013

Publication series

Name	Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Conference

Conference	2013 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2013
Country/Territory	China
City	Suzhou
Period	15/07/13 → 19/07/13

Keywords

Transmission electron microscopy (TEM)
conductive filaments
in-situ
resistive random access memory

Access to Document

10.1109/IPFA.2013.6599223

Cite this

Sun, J., Wu, X., Liu, Q., Liu, M., & Sun, L. T. (2013). Real time observation of nanoscale multiple conductive filaments in RRAM by using advanced in-situ TEM. In Proceedings of the 2013 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2013 (pp. 560-562). Article 6599223 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). https://doi.org/10.1109/IPFA.2013.6599223

Sun, J. ; Wu, X. ; Liu, Q. et al. / Real time observation of nanoscale multiple conductive filaments in RRAM by using advanced in-situ TEM. Proceedings of the 2013 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2013. 2013. pp. 560-562 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA).

@inproceedings{9415632ac2554f93af4ac532b282be32,

title = "Real time observation of nanoscale multiple conductive filaments in RRAM by using advanced in-situ TEM",

abstract = "In this letter, we dynamically investigate the resistive switching characteristics and physical mechanism of the ZrO2-based device. Using in-situ transmission electron microscopy, we observe in real time that multiple conductive filaments (CFs) are formed across the ZrO2 layer between top electrode and bottom electrodes after forming. Various top electrode materials have been used, such as Cu, Ag, and Ni. Contrary to common belief, it is found that CF growth begins at the anode, rather than having to reach the cathode and grow backwards. Energy-dispersive X-ray spectroscopy results confirm that metal from the top electrode is the main composition of the CFs.",

keywords = "Transmission electron microscopy (TEM), conductive filaments, in-situ, resistive random access memory",

author = "J. Sun and X. Wu and Q. Liu and M. Liu and Sun, \{L. T.\}",

year = "2013",

doi = "10.1109/IPFA.2013.6599223",

language = "英语",

isbn = "9781479912414",

series = "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA",

pages = "560--562",

booktitle = "Proceedings of the 2013 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2013",

note = "2013 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2013 ; Conference date: 15-07-2013 Through 19-07-2013",

}

Sun, J, Wu, X, Liu, Q, Liu, M & Sun, LT 2013, Real time observation of nanoscale multiple conductive filaments in RRAM by using advanced in-situ TEM. in Proceedings of the 2013 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2013., 6599223, Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, pp. 560-562, 2013 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2013, Suzhou, China, 15/07/13. https://doi.org/10.1109/IPFA.2013.6599223

Real time observation of nanoscale multiple conductive filaments in RRAM by using advanced in-situ TEM. / Sun, J.; Wu, X.; Liu, Q. et al.
Proceedings of the 2013 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2013. 2013. p. 560-562 6599223 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Real time observation of nanoscale multiple conductive filaments in RRAM by using advanced in-situ TEM

AU - Sun, J.

AU - Wu, X.

AU - Liu, Q.

AU - Liu, M.

AU - Sun, L. T.

PY - 2013

Y1 - 2013

N2 - In this letter, we dynamically investigate the resistive switching characteristics and physical mechanism of the ZrO2-based device. Using in-situ transmission electron microscopy, we observe in real time that multiple conductive filaments (CFs) are formed across the ZrO2 layer between top electrode and bottom electrodes after forming. Various top electrode materials have been used, such as Cu, Ag, and Ni. Contrary to common belief, it is found that CF growth begins at the anode, rather than having to reach the cathode and grow backwards. Energy-dispersive X-ray spectroscopy results confirm that metal from the top electrode is the main composition of the CFs.

AB - In this letter, we dynamically investigate the resistive switching characteristics and physical mechanism of the ZrO2-based device. Using in-situ transmission electron microscopy, we observe in real time that multiple conductive filaments (CFs) are formed across the ZrO2 layer between top electrode and bottom electrodes after forming. Various top electrode materials have been used, such as Cu, Ag, and Ni. Contrary to common belief, it is found that CF growth begins at the anode, rather than having to reach the cathode and grow backwards. Energy-dispersive X-ray spectroscopy results confirm that metal from the top electrode is the main composition of the CFs.

KW - Transmission electron microscopy (TEM)

KW - conductive filaments

KW - in-situ

KW - resistive random access memory

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DO - 10.1109/IPFA.2013.6599223

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T3 - Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

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BT - Proceedings of the 2013 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2013

T2 - 2013 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2013

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Sun J, Wu X, Liu Q, Liu M, Sun LT. Real time observation of nanoscale multiple conductive filaments in RRAM by using advanced in-situ TEM. In Proceedings of the 2013 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2013. 2013. p. 560-562. 6599223. (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). doi: 10.1109/IPFA.2013.6599223

Real time observation of nanoscale multiple conductive filaments in RRAM by using advanced in-situ TEM

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