Reactive deposition epitaxial growth of β-FeSi2 film on Si(111): In situ observation by reflective high energy electron diffraction

Lianwei Wang; Chenglu Lin; Qinwo Shen; Xian Lin; Rushan Ni; Shichang Zou

doi:10.1063/1.113385

Reactive deposition epitaxial growth of β-FeSi₂ film on Si(111): In situ observation by reflective high energy electron diffraction

Lianwei Wang^*
, Chenglu Lin
, Qinwo Shen
, Xian Lin
, Rushan Ni
, Shichang Zou

^*Corresponding author for this work

CAS - Shanghai Institute of Microsystem and Information Technology

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

Reactive deposition epitaxial growth of β-FeSi₂ film on Si(111) has been studied by in situ observation of reflective high energy electron diffraction combined with ex situ Auger electron spectroscopy depth profile analysis. The direct phase formed at the top surface after iron coverage has been determined to be mixture Fe₃Si and Fe₅Si₃, FeSi, and β-FeSi₂, respectively, according to the results of different deposit temperature. Diffraction patterns as well as the depth profile for the Fe/Si ratio have been discussed.

Original language	English
Pages (from-to)	3453
Number of pages	1
Journal	Applied Physics Letters
DOIs	https://doi.org/10.1063/1.113385
State	Published - 1995
Externally published	Yes

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title = "Reactive deposition epitaxial growth of β-FeSi2 film on Si(111): In situ observation by reflective high energy electron diffraction",

abstract = "Reactive deposition epitaxial growth of β-FeSi2 film on Si(111) has been studied by in situ observation of reflective high energy electron diffraction combined with ex situ Auger electron spectroscopy depth profile analysis. The direct phase formed at the top surface after iron coverage has been determined to be mixture Fe3Si and Fe5Si3, FeSi, and β-FeSi2, respectively, according to the results of different deposit temperature. Diffraction patterns as well as the depth profile for the Fe/Si ratio have been discussed.",

author = "Lianwei Wang and Chenglu Lin and Qinwo Shen and Xian Lin and Rushan Ni and Shichang Zou",

year = "1995",

doi = "10.1063/1.113385",

language = "英语",

pages = "3453",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

}

TY - JOUR

T1 - Reactive deposition epitaxial growth of β-FeSi2 film on Si(111)

T2 - In situ observation by reflective high energy electron diffraction

AU - Wang, Lianwei

AU - Lin, Chenglu

AU - Shen, Qinwo

AU - Lin, Xian

AU - Ni, Rushan

AU - Zou, Shichang

PY - 1995

Y1 - 1995

N2 - Reactive deposition epitaxial growth of β-FeSi2 film on Si(111) has been studied by in situ observation of reflective high energy electron diffraction combined with ex situ Auger electron spectroscopy depth profile analysis. The direct phase formed at the top surface after iron coverage has been determined to be mixture Fe3Si and Fe5Si3, FeSi, and β-FeSi2, respectively, according to the results of different deposit temperature. Diffraction patterns as well as the depth profile for the Fe/Si ratio have been discussed.

AB - Reactive deposition epitaxial growth of β-FeSi2 film on Si(111) has been studied by in situ observation of reflective high energy electron diffraction combined with ex situ Auger electron spectroscopy depth profile analysis. The direct phase formed at the top surface after iron coverage has been determined to be mixture Fe3Si and Fe5Si3, FeSi, and β-FeSi2, respectively, according to the results of different deposit temperature. Diffraction patterns as well as the depth profile for the Fe/Si ratio have been discussed.

UR - https://www.scopus.com/pages/publications/36449001552

U2 - 10.1063/1.113385

DO - 10.1063/1.113385

M3 - 文章

AN - SCOPUS:36449001552

SN - 0003-6951

SP - 3453

JO - Applied Physics Letters

JF - Applied Physics Letters

ER -

Reactive deposition epitaxial growth of β-FeSi₂ film on Si(111): In situ observation by reflective high energy electron diffraction

Abstract

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