Rapid thermal processing of Bi2Ti2O7 thin films grown by chemical solution decomposition

Shao Wei Wang; Hong Wang; Xianming Wu; Shuxia Shang; Min Wang; Zhifeng Li; Wei Lu

doi:10.1016/S0022-0248(01)01023-5

Rapid thermal processing of Bi₂Ti₂O₇ thin films grown by chemical solution decomposition

Shao Wei Wang^*
, Hong Wang
, Xianming Wu
, Shuxia Shang
, Min Wang
, Zhifeng Li
, Wei Lu

^*Corresponding author for this work

CAS - Shanghai Institute of Technical Physics
Shandong University

Research output: Contribution to journal › Article › peer-review

62 Scopus citations

Abstract

Bi₂Ti₂O₇ thin films were successfully prepared on n-type Si(100) substrate by using chemical solution decomposition (CSD) technique followed by rapid thermal annealing (RTA). The structural properties were studied by X-ray diffraction (XRD) and atomic force microscopy (AFM). The dielectric properties of the films were evaluated. The leakage current density of Bi₂Ti₂O₇ thin films is of the order of 10^-7A/cm² when the applied voltage is between -18 and +18V. It is much lower than that of films treated by normal thermal processing. The dielectric constant varies from 159 to 150 within the frequency range of 10-100KHz, while the dissipation factor is lower than 0.02 in this range.

Original language	English
Pages (from-to)	323-326
Number of pages	4
Journal	Journal of Crystal Growth
Volume	224
Issue number	3-4
DOIs	https://doi.org/10.1016/S0022-0248(01)01023-5
State	Published - Apr 2001
Externally published	Yes

Keywords

A3. Polycrystalline deposition
B1. Bismuth compounds
B2. Dielectric materials

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10.1016/S0022-0248(01)01023-5

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title = "Rapid thermal processing of Bi2Ti2O7 thin films grown by chemical solution decomposition",

abstract = "Bi2Ti2O7 thin films were successfully prepared on n-type Si(100) substrate by using chemical solution decomposition (CSD) technique followed by rapid thermal annealing (RTA). The structural properties were studied by X-ray diffraction (XRD) and atomic force microscopy (AFM). The dielectric properties of the films were evaluated. The leakage current density of Bi2Ti2O7 thin films is of the order of 10-7A/cm2 when the applied voltage is between -18 and +18V. It is much lower than that of films treated by normal thermal processing. The dielectric constant varies from 159 to 150 within the frequency range of 10-100KHz, while the dissipation factor is lower than 0.02 in this range.",

keywords = "A3. Polycrystalline deposition, B1. Bismuth compounds, B2. Dielectric materials",

author = "Wang, \{Shao Wei\} and Hong Wang and Xianming Wu and Shuxia Shang and Min Wang and Zhifeng Li and Wei Lu",

year = "2001",

month = apr,

doi = "10.1016/S0022-0248(01)01023-5",

language = "英语",

volume = "224",

pages = "323--326",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

number = "3-4",

}

TY - JOUR

T1 - Rapid thermal processing of Bi2Ti2O7 thin films grown by chemical solution decomposition

AU - Wang, Shao Wei

AU - Wang, Hong

AU - Wu, Xianming

AU - Shang, Shuxia

AU - Wang, Min

AU - Li, Zhifeng

AU - Lu, Wei

PY - 2001/4

Y1 - 2001/4

N2 - Bi2Ti2O7 thin films were successfully prepared on n-type Si(100) substrate by using chemical solution decomposition (CSD) technique followed by rapid thermal annealing (RTA). The structural properties were studied by X-ray diffraction (XRD) and atomic force microscopy (AFM). The dielectric properties of the films were evaluated. The leakage current density of Bi2Ti2O7 thin films is of the order of 10-7A/cm2 when the applied voltage is between -18 and +18V. It is much lower than that of films treated by normal thermal processing. The dielectric constant varies from 159 to 150 within the frequency range of 10-100KHz, while the dissipation factor is lower than 0.02 in this range.

AB - Bi2Ti2O7 thin films were successfully prepared on n-type Si(100) substrate by using chemical solution decomposition (CSD) technique followed by rapid thermal annealing (RTA). The structural properties were studied by X-ray diffraction (XRD) and atomic force microscopy (AFM). The dielectric properties of the films were evaluated. The leakage current density of Bi2Ti2O7 thin films is of the order of 10-7A/cm2 when the applied voltage is between -18 and +18V. It is much lower than that of films treated by normal thermal processing. The dielectric constant varies from 159 to 150 within the frequency range of 10-100KHz, while the dissipation factor is lower than 0.02 in this range.

KW - A3. Polycrystalline deposition

KW - B1. Bismuth compounds

KW - B2. Dielectric materials

UR - https://www.scopus.com/pages/publications/0035309377

U2 - 10.1016/S0022-0248(01)01023-5

DO - 10.1016/S0022-0248(01)01023-5

M3 - 文章

AN - SCOPUS:0035309377

SN - 0022-0248

VL - 224

SP - 323

EP - 326

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 3-4

ER -

Rapid thermal processing of Bi₂Ti₂O₇ thin films grown by chemical solution decomposition

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Keywords

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