Raman scattering spectroscopy study on chalcogenide phase-change materials

Chalcogenide-based phase-change materials, functioning as the crucial constituents of data memory devices, have attracted extensive attention in recent years due to their outstanding phase-change properties. Raman scattering spectroscopy has been extensively utilized to probe the phase change process in chalcogenides. To delve deeper into the properties of chalcogenides, researchers can modulate experimental variables, including laser power, element doping levels, sample thickness, polarized light characteristics, and temperature. Combining this approach with other experimental and theoretical techniques can foster a more profound comprehension of chalcogenide materials. Our aim is to offer a comprehensive understanding of lattice dynamics and phonon dispersion of chalcogenides by analyzing the Raman scattering spectra under different external conditions. In addition, some obstacles hindering the researches and developments in the study of Raman spectroscopy of chalcogenide phase-change materials are proposed. The article could provide invaluable insights and directions for facilitating the development of more efficient and sophisticated storage materials.