Raman scattering of nanocrystalline silicon embedded in SiO2

  • Zhixun Ma*
  • , Xianbo Liao
  • , Guanglin Kong
  • , Junhao Chu
  • *Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

20 Scopus citations

Abstract

Raman scattering of nanocrystalline silicon embedded in SiO2 matrix is systematically investigated. It is found that the Raman spectra can be well fitted by 5 Lorentzian lines in the Raman shift range of 100-600 cm-1. The two-phonon scattering is also observed in the range of 600-1100 cm-1. The experimental results indicate that the silicon crystallites in the films consist of nanocrystalline phase and amorphous phase; both can contribute to the Raman scattering. Besides the red-shift of the first order optical phonon modes with the decreasing size of silicon nanocrystallites, we have also found an enhancement effect on the second order Raman scattering, and the size effect on their Raman shift.

Original languageEnglish
Pages (from-to)414-420
Number of pages7
JournalScience in China, Series A: Mathematics
Volume43
Issue number4
DOIs
StatePublished - Apr 2000
Externally publishedYes

Keywords

  • Nanocrystalline silicon
  • Phonon confinement effect
  • Raman scattering

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