TY - GEN
T1 - Raman and morphological characteristics of carbon nanotubes depending on substrate temperatures by chemical vapor deposition
AU - Guo, P. S.
AU - Sun, Z.
AU - Chen, T.
AU - Xu, M.
AU - Zheng, Z. H.
AU - Sun, Y.
PY - 2008
Y1 - 2008
N2 - Carbon nanotubes (CNTs) films were synthesized at low pressure using nickel as catalyst by thermal chemical vapor deposition with hydrogen-acetylene mixture. The Raman characteristics and morphological features of CNTs at different substrate temperatures were investigated. The variation of CNTs morphological feature mainly depends on the substrate temperatures. In the low temperature range (450-550°C), the film consists of graphite particles and CNTs mixture with some amorphous phase. With increase the temperature (550-650°C), the tube content increases, and the tube diameter decreases. At high temperature range (700-800°C), the film consists of CNTs and nanoparticles mixture. Raman spectroscopy results show that the intensity ratio ID/IG of the G- and D-band has a maximum at the medium temperature of 600°C, and the width of G band becomes narrow with the substrate temperature. The growth behaviors of CNTs at different temperatures are discussed based on the experimental results.
AB - Carbon nanotubes (CNTs) films were synthesized at low pressure using nickel as catalyst by thermal chemical vapor deposition with hydrogen-acetylene mixture. The Raman characteristics and morphological features of CNTs at different substrate temperatures were investigated. The variation of CNTs morphological feature mainly depends on the substrate temperatures. In the low temperature range (450-550°C), the film consists of graphite particles and CNTs mixture with some amorphous phase. With increase the temperature (550-650°C), the tube content increases, and the tube diameter decreases. At high temperature range (700-800°C), the film consists of CNTs and nanoparticles mixture. Raman spectroscopy results show that the intensity ratio ID/IG of the G- and D-band has a maximum at the medium temperature of 600°C, and the width of G band becomes narrow with the substrate temperature. The growth behaviors of CNTs at different temperatures are discussed based on the experimental results.
UR - https://www.scopus.com/pages/publications/52649158308
U2 - 10.1109/INEC.2008.4585484
DO - 10.1109/INEC.2008.4585484
M3 - 会议稿件
AN - SCOPUS:52649158308
SN - 9781424415731
T3 - 2008 2nd IEEE International Nanoelectronics Conference, INEC 2008
SP - 271
EP - 275
BT - 2008 2nd IEEE International Nanoelectronics Conference, INEC 2008
T2 - 2008 2nd IEEE International Nanoelectronics Conference, INEC 2008
Y2 - 24 March 2008 through 27 March 2008
ER -