TY - GEN
T1 - RAID45
T2 - 42nd IEEE International Conference on Computer Design, ICCD 2024
AU - Liu, Jialin
AU - Liang, Yujiong
AU - Song, Yunpeng
AU - Shi, Liang
N1 - Publisher Copyright:
© 2024 IEEE.
PY - 2024
Y1 - 2024
N2 - High-densitysolid-state drives (SSDs), such as triple-level cell (TLC) or quad-level cell (QLC) flash, are adopted in parity-based RAID systems to achieve high reliability with low redundancy. However, the parity writes cause high write wear, which is unfriendly to such high-density SSDs with low write endurance. Conversely, high-performance SSDs, such as ZNAND, XL-Flash, have high write endurance but their high cost per bit hinders their deployment in RAID. This paper proposed a novel hybrid RAID structure, RAID45, to reduce parity writes for highdensity SSDs. Specifically, RAID45 uses high-performance SSD to store the parity of write-intensive stripes to absorb as much of the wear of parity writes on high-density SSDs as possible. Experimental results on real platform show that RAID45 achieves encouraging parity write reduction on the high-density SSDs.
AB - High-densitysolid-state drives (SSDs), such as triple-level cell (TLC) or quad-level cell (QLC) flash, are adopted in parity-based RAID systems to achieve high reliability with low redundancy. However, the parity writes cause high write wear, which is unfriendly to such high-density SSDs with low write endurance. Conversely, high-performance SSDs, such as ZNAND, XL-Flash, have high write endurance but their high cost per bit hinders their deployment in RAID. This paper proposed a novel hybrid RAID structure, RAID45, to reduce parity writes for highdensity SSDs. Specifically, RAID45 uses high-performance SSD to store the parity of write-intensive stripes to absorb as much of the wear of parity writes on high-density SSDs as possible. Experimental results on real platform show that RAID45 achieves encouraging parity write reduction on the high-density SSDs.
UR - https://www.scopus.com/pages/publications/85217014067
U2 - 10.1109/ICCD63220.2024.00060
DO - 10.1109/ICCD63220.2024.00060
M3 - 会议稿件
AN - SCOPUS:85217014067
T3 - Proceedings - IEEE International Conference on Computer Design: VLSI in Computers and Processors
SP - 348
EP - 355
BT - Proceedings - 2024 IEEE 42nd International Conference on Computer Design, ICCD 2024
PB - Institute of Electrical and Electronics Engineers Inc.
Y2 - 18 November 2024 through 20 November 2024
ER -