Radio-Frequency modeling and parameters extraction of multi-cell MOSFET device

Ying Zhou; Pan Pan Yu; Jian Jun Gao

doi:10.11972/j.issn.1001-9014.2017.05.007

Radio-Frequency modeling and parameters extraction of multi-cell MOSFET device

Ying Zhou
, Pan Pan Yu
, Jian Jun Gao^*

^*Corresponding author for this work

School of Physics and Electronic Science

East China Normal University

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

An improved small-signal model for nanometer metal-oxide-semiconductor field-effect transistor (MOSFET) device is presented in this paper. The skin effect and multiple-cell effect are both taken into account. In the extracting procedure, the parameters of elementary cells are determined from the conventional model based on the scalable rules. This small-signal model was validated by the good agreement between measured and simulated S-parameters of 8×0.6×12 μm (number of gate fingers×unit gatewidth×cells) 90-nm gatelength MOSFET under three bias points up to 40 GHz.

Original language	English
Pages (from-to)	550-553 and 562
Journal	Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves
Volume	36
Issue number	5
DOIs	https://doi.org/10.11972/j.issn.1001-9014.2017.05.007
State	Published - 1 Oct 2017

Keywords

Multi-cell model
Parameter extraction of model
Semi-conductor technology
Skin effect
Small-signal model

Access to Document

10.11972/j.issn.1001-9014.2017.05.007

Cite this

@article{0df27550d7ca4e77b204bf8bcf5538fb,

title = "Radio-Frequency modeling and parameters extraction of multi-cell MOSFET device",

abstract = "An improved small-signal model for nanometer metal-oxide-semiconductor field-effect transistor (MOSFET) device is presented in this paper. The skin effect and multiple-cell effect are both taken into account. In the extracting procedure, the parameters of elementary cells are determined from the conventional model based on the scalable rules. This small-signal model was validated by the good agreement between measured and simulated S-parameters of 8×0.6×12 μm (number of gate fingers×unit gatewidth×cells) 90-nm gatelength MOSFET under three bias points up to 40 GHz.",

keywords = "Multi-cell model, Parameter extraction of model, Semi-conductor technology, Skin effect, Small-signal model",

author = "Ying Zhou and Yu, \{Pan Pan\} and Gao, \{Jian Jun\}",

year = "2017",

month = oct,

day = "1",

doi = "10.11972/j.issn.1001-9014.2017.05.007",

language = "英语",

volume = "36",

pages = "550--553 and 562",

journal = "Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves",

issn = "1001-9014",

publisher = "Chinese Optical Society",

number = "5",

}

TY - JOUR

T1 - Radio-Frequency modeling and parameters extraction of multi-cell MOSFET device

AU - Zhou, Ying

AU - Yu, Pan Pan

AU - Gao, Jian Jun

PY - 2017/10/1

Y1 - 2017/10/1

N2 - An improved small-signal model for nanometer metal-oxide-semiconductor field-effect transistor (MOSFET) device is presented in this paper. The skin effect and multiple-cell effect are both taken into account. In the extracting procedure, the parameters of elementary cells are determined from the conventional model based on the scalable rules. This small-signal model was validated by the good agreement between measured and simulated S-parameters of 8×0.6×12 μm (number of gate fingers×unit gatewidth×cells) 90-nm gatelength MOSFET under three bias points up to 40 GHz.

AB - An improved small-signal model for nanometer metal-oxide-semiconductor field-effect transistor (MOSFET) device is presented in this paper. The skin effect and multiple-cell effect are both taken into account. In the extracting procedure, the parameters of elementary cells are determined from the conventional model based on the scalable rules. This small-signal model was validated by the good agreement between measured and simulated S-parameters of 8×0.6×12 μm (number of gate fingers×unit gatewidth×cells) 90-nm gatelength MOSFET under three bias points up to 40 GHz.

KW - Multi-cell model

KW - Parameter extraction of model

KW - Semi-conductor technology

KW - Skin effect

KW - Small-signal model

UR - https://www.scopus.com/pages/publications/85039547478

U2 - 10.11972/j.issn.1001-9014.2017.05.007

DO - 10.11972/j.issn.1001-9014.2017.05.007

M3 - 文章

AN - SCOPUS:85039547478

SN - 1001-9014

VL - 36

SP - 550-553 and 562

JO - Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves

JF - Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves

IS - 5

ER -

Radio-Frequency modeling and parameters extraction of multi-cell MOSFET device

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this