Quantum-trajectory analysis for charge transfer in solid materials induced by strong laser fields

We investigate the dependence of charge transfer on the intensity of driving laser field when SiO₂ crystal is irradiated by an 800 nm laser. It is surprising that the direction of charge transfer undergoes a sudden reversal when the driving laser intensity exceeds critical values with different carrier-envelope phases. By applying quantum-trajectory analysis, we find that the Bloch oscillation plays an important role in charge transfer in solids. Also, we study the interaction of a strong laser with gallium nitride (GaN), which is widely used in optoelectronics. A pump-probe scheme is applied to control the quantum trajectories of the electrons in the conduction band. The signal of charge transfer is controlled successfully by means of a theoretically proposed approach.