Quantum and transport scattering times in modulation-doped Al xGa1-xN/GaN single quantum wells

Z. W. Zheng; B. Shen; Z. J. Qiu; Y. S. Gui; N. Tang; J. Liu; D. J. Chen; R. Zhang; Y. Shi; Y. D. Zheng; S. L. Guo; J. H. Chu; K. Hoshino; Y. Arakawa

doi:10.1007/s00339-004-2928-z

Quantum and transport scattering times in modulation-doped Al _xGa_1-xN/GaN single quantum wells

Z. W. Zheng, B. Shen^*, Z. J. Qiu, Y. S. Gui, N. Tang, J. Liu, D. J. Chen, R. Zhang, Y. Shi, Y. D. Zheng, S. L. Guo, J. H. Chu, K. Hoshino, Y. Arakawa

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

Quantum and transport scattering times related to different subbands in modulation-doped Al_0.22Ga_0.78N/GaN single quantum wells (SQW) have been studied by magneto-transport measurements. The quantum scattering time related to the first and the second subbands is determined to be 0.078 ps and 0.088 ps, respectively, at 1.5 K. Results indicate that the scatterings from heterointerface and ionized donors at both side of GaN well are all important in limiting quantum scattering time. By using mobility spectrum technique the transport scattering time related to the first subband is determined to be 0.128 ps. Transport-to-quantum scattering time ratio in the first subband is 1.6. It is concluded the large angle scatterings play a very important role in limiting quantum scattering time in this SQW.

Original language	English
Pages (from-to)	39-42
Number of pages	4
Journal	Applied Physics A: Materials Science and Processing
Volume	80
Issue number	1
DOIs	https://doi.org/10.1007/s00339-004-2928-z
State	Published - Jan 2005
Externally published	Yes

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Zheng, Z. W., Shen, B., Qiu, Z. J., Gui, Y. S., Tang, N., Liu, J., Chen, D. J., Zhang, R., Shi, Y., Zheng, Y. D., Guo, S. L., Chu, J. H., Hoshino, K., & Arakawa, Y. (2005). Quantum and transport scattering times in modulation-doped Al _xGa_1-xN/GaN single quantum wells. Applied Physics A: Materials Science and Processing, 80(1), 39-42. https://doi.org/10.1007/s00339-004-2928-z

@article{8ceb17b4a6ca4f43bf0f242a9008d581,

title = "Quantum and transport scattering times in modulation-doped Al xGa1-xN/GaN single quantum wells",

abstract = "Quantum and transport scattering times related to different subbands in modulation-doped Al0.22Ga0.78N/GaN single quantum wells (SQW) have been studied by magneto-transport measurements. The quantum scattering time related to the first and the second subbands is determined to be 0.078 ps and 0.088 ps, respectively, at 1.5 K. Results indicate that the scatterings from heterointerface and ionized donors at both side of GaN well are all important in limiting quantum scattering time. By using mobility spectrum technique the transport scattering time related to the first subband is determined to be 0.128 ps. Transport-to-quantum scattering time ratio in the first subband is 1.6. It is concluded the large angle scatterings play a very important role in limiting quantum scattering time in this SQW.",

author = "Zheng, \{Z. W.\} and B. Shen and Qiu, \{Z. J.\} and Gui, \{Y. S.\} and N. Tang and J. Liu and Chen, \{D. J.\} and R. Zhang and Y. Shi and Zheng, \{Y. D.\} and Guo, \{S. L.\} and Chu, \{J. H.\} and K. Hoshino and Y. Arakawa",

year = "2005",

month = jan,

doi = "10.1007/s00339-004-2928-z",

language = "英语",

volume = "80",

pages = "39--42",

journal = "Applied Physics A: Materials Science and Processing",

issn = "0947-8396",

publisher = "Springer Heidelberg",

number = "1",

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TY - JOUR

T1 - Quantum and transport scattering times in modulation-doped Al xGa1-xN/GaN single quantum wells

AU - Zheng, Z. W.

AU - Shen, B.

AU - Qiu, Z. J.

AU - Gui, Y. S.

AU - Tang, N.

AU - Liu, J.

AU - Chen, D. J.

AU - Zhang, R.

AU - Shi, Y.

AU - Zheng, Y. D.

AU - Guo, S. L.

AU - Chu, J. H.

AU - Hoshino, K.

AU - Arakawa, Y.

PY - 2005/1

Y1 - 2005/1

N2 - Quantum and transport scattering times related to different subbands in modulation-doped Al0.22Ga0.78N/GaN single quantum wells (SQW) have been studied by magneto-transport measurements. The quantum scattering time related to the first and the second subbands is determined to be 0.078 ps and 0.088 ps, respectively, at 1.5 K. Results indicate that the scatterings from heterointerface and ionized donors at both side of GaN well are all important in limiting quantum scattering time. By using mobility spectrum technique the transport scattering time related to the first subband is determined to be 0.128 ps. Transport-to-quantum scattering time ratio in the first subband is 1.6. It is concluded the large angle scatterings play a very important role in limiting quantum scattering time in this SQW.

AB - Quantum and transport scattering times related to different subbands in modulation-doped Al0.22Ga0.78N/GaN single quantum wells (SQW) have been studied by magneto-transport measurements. The quantum scattering time related to the first and the second subbands is determined to be 0.078 ps and 0.088 ps, respectively, at 1.5 K. Results indicate that the scatterings from heterointerface and ionized donors at both side of GaN well are all important in limiting quantum scattering time. By using mobility spectrum technique the transport scattering time related to the first subband is determined to be 0.128 ps. Transport-to-quantum scattering time ratio in the first subband is 1.6. It is concluded the large angle scatterings play a very important role in limiting quantum scattering time in this SQW.

UR - https://www.scopus.com/pages/publications/10644241712

U2 - 10.1007/s00339-004-2928-z

DO - 10.1007/s00339-004-2928-z

M3 - 文章

AN - SCOPUS:10644241712

SN - 0947-8396

VL - 80

SP - 39

EP - 42

JO - Applied Physics A: Materials Science and Processing

JF - Applied Physics A: Materials Science and Processing

IS - 1

ER -

Quantum and transport scattering times in modulation-doped Al _xGa_1-xN/GaN single quantum wells

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