Abstract
By using quantitative mobility spectrum analysis (QMSA) technique, the free electron and hole concentrations and mobilities are determined from field-dependent Hall and resistivity data. The results confirm that the QMSA yields accurate and reliable concentrations and mobilities for all classes of carrier in the sample, and also has greater sensitivity to minority carrier concentrations. The QMSA is found to be a suitable standard tool for the routine electrical characterization of semiconductor materials and devices.
| Original language | English |
|---|---|
| Pages (from-to) | 913-918 |
| Number of pages | 6 |
| Journal | Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors |
| Volume | 19 |
| Issue number | 12 |
| State | Published - 1998 |
| Externally published | Yes |