Abstract
By using quantitative mobility spectrum analysis technique, the density and mobility for each subband of accumulated layer on the n-HgCdTe photoconducting device are determined from the relations among magnetic field intensity, Hall effect and resistivity data. The results are in good agreement with the Shubnikov-de Hass measurement and theoretical calculation values.
| Original language | English |
|---|---|
| Pages (from-to) | 182-186 |
| Number of pages | 5 |
| Journal | Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves |
| Volume | 17 |
| Issue number | 3 |
| State | Published - 1998 |
| Externally published | Yes |