Quality Hg1-xCdxTe films grown by the modified meltetch liquid phase epitaxy method

Li Biao; Y. S. Gui; J. Q. Zhu; J. H. Chu

doi:10.1117/12.300702

Quality Hg_1-xCd_xTe films grown by the modified meltetch liquid phase epitaxy method

Li Biao^*
, Y. S. Gui
, J. Q. Zhu
, J. H. Chu

^*Corresponding author for this work

CAS - Shanghai Institute of Technical Physics

Research output: Contribution to journal › Conference article › peer-review

Abstract

Hg_1-xCd_xTe films were grown by a modified meltetch liquid phase epitaxial (LPE) technique which includes both substrate and epilayer etchback steps. The crystal quality of epilayer has been investigated by means of transmission electron microscope (TEM), scanning electron microscope (SEM), and double crystal x-ray rock curve (XRD). It has been found that adequate meltetch of the substrate at the beginning of LPE provides a fresh and flat surface for epitaxial growth, while epilayer meltetch at the end of LPE may prevent spurious and melt sticking.

Original language	English
Pages (from-to)	356-360
Number of pages	5
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	3175
DOIs	https://doi.org/10.1117/12.300702
State	Published - 1998
Externally published	Yes
Event	3rd International Conference on Thin Film Physics and Applications - Shanghai, China Duration: 15 Apr 1997 → 15 Apr 1997

Keywords

HgCdTe
Liquid phase epitaxy
Meltetch
Structure

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10.1117/12.300702

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@article{63bf35e26bee421cb559f2ba536d1d7e,

title = "Quality Hg1-xCdxTe films grown by the modified meltetch liquid phase epitaxy method",

abstract = "Hg1-xCdxTe films were grown by a modified meltetch liquid phase epitaxial (LPE) technique which includes both substrate and epilayer etchback steps. The crystal quality of epilayer has been investigated by means of transmission electron microscope (TEM), scanning electron microscope (SEM), and double crystal x-ray rock curve (XRD). It has been found that adequate meltetch of the substrate at the beginning of LPE provides a fresh and flat surface for epitaxial growth, while epilayer meltetch at the end of LPE may prevent spurious and melt sticking.",

keywords = "HgCdTe, Liquid phase epitaxy, Meltetch, Structure",

author = "Li Biao and Gui, \{Y. S.\} and Zhu, \{J. Q.\} and Chu, \{J. H.\}",

year = "1998",

doi = "10.1117/12.300702",

language = "英语",

volume = "3175",

pages = "356--360",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "3rd International Conference on Thin Film Physics and Applications ; Conference date: 15-04-1997 Through 15-04-1997",

}

TY - JOUR

T1 - Quality Hg1-xCdxTe films grown by the modified meltetch liquid phase epitaxy method

AU - Biao, Li

AU - Gui, Y. S.

AU - Zhu, J. Q.

AU - Chu, J. H.

PY - 1998

Y1 - 1998

N2 - Hg1-xCdxTe films were grown by a modified meltetch liquid phase epitaxial (LPE) technique which includes both substrate and epilayer etchback steps. The crystal quality of epilayer has been investigated by means of transmission electron microscope (TEM), scanning electron microscope (SEM), and double crystal x-ray rock curve (XRD). It has been found that adequate meltetch of the substrate at the beginning of LPE provides a fresh and flat surface for epitaxial growth, while epilayer meltetch at the end of LPE may prevent spurious and melt sticking.

AB - Hg1-xCdxTe films were grown by a modified meltetch liquid phase epitaxial (LPE) technique which includes both substrate and epilayer etchback steps. The crystal quality of epilayer has been investigated by means of transmission electron microscope (TEM), scanning electron microscope (SEM), and double crystal x-ray rock curve (XRD). It has been found that adequate meltetch of the substrate at the beginning of LPE provides a fresh and flat surface for epitaxial growth, while epilayer meltetch at the end of LPE may prevent spurious and melt sticking.

KW - HgCdTe

KW - Liquid phase epitaxy

KW - Meltetch

KW - Structure

UR - https://www.scopus.com/pages/publications/57649090418

U2 - 10.1117/12.300702

DO - 10.1117/12.300702

M3 - 会议文章

AN - SCOPUS:57649090418

SN - 0277-786X

VL - 3175

SP - 356

EP - 360

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - 3rd International Conference on Thin Film Physics and Applications

Y2 - 15 April 1997 through 15 April 1997

ER -

Quality Hg_1-xCd_xTe films grown by the modified meltetch liquid phase epitaxy method

Abstract

Keywords

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