PZT thin films prepared by chemical solution decomposition using a Bi2Ti2O7 buffer layer

Shao Wei Wang; Hong Wang; Shu Xia Shang; Ji Huang; Zhuo Wang; Min Wang

doi:10.1016/S0022-0248(00)00524-8

PZT thin films prepared by chemical solution decomposition using a Bi₂Ti₂O₇ buffer layer

Shao Wei Wang^*
, Hong Wang
, Shu Xia Shang
, Ji Huang
, Zhuo Wang
, Min Wang

^*Corresponding author for this work

Shandong University

Research output: Contribution to journal › Article › peer-review

38 Scopus citations

Abstract

A thin-film bilayer structure consisting of polycrystalline Pb(Zr_0.5Ti_0.5)O₃ (PZT) and preferentially (111)-orientated Bi₂Ti₂O₇ were prepared using the chemical solution decomposition (CSD) technique followed by rapid thermal annealing (RTA). The effects of various annealing temperatures and times upon crystallization were investigated. The C-V and dielectric characteristics were measured. The PZT films annealed at 750°C for 10 min consist of a single perovskite phase. The value of leakage current density at 9 V is 3.79 × 10^-7 A/cm². The counterclockwise hysteresis curve observed shows that it is polarization-type switching. The PZT/Bi₂Ti₂O₇ film in the ON and OFF states is relatively stable.

Original language	English
Pages (from-to)	388-392
Number of pages	5
Journal	Journal of Crystal Growth
Volume	217
Issue number	4
DOIs	https://doi.org/10.1016/S0022-0248(00)00524-8
State	Published - 2 Aug 2000
Externally published	Yes

Keywords

Chemical solution decomposition
PZT/BiTiO films
X-ray diffraction

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10.1016/S0022-0248(00)00524-8

Cite this

@article{f62efe0a5ad84f8ab2d04ae9fd758823,

title = "PZT thin films prepared by chemical solution decomposition using a Bi2Ti2O7 buffer layer",

abstract = "A thin-film bilayer structure consisting of polycrystalline Pb(Zr0.5Ti0.5)O3 (PZT) and preferentially (111)-orientated Bi2Ti2O7 were prepared using the chemical solution decomposition (CSD) technique followed by rapid thermal annealing (RTA). The effects of various annealing temperatures and times upon crystallization were investigated. The C-V and dielectric characteristics were measured. The PZT films annealed at 750°C for 10 min consist of a single perovskite phase. The value of leakage current density at 9 V is 3.79 × 10-7 A/cm2. The counterclockwise hysteresis curve observed shows that it is polarization-type switching. The PZT/Bi2Ti2O7 film in the ON and OFF states is relatively stable.",

keywords = "Chemical solution decomposition, PZT/BiTiO films, X-ray diffraction",

author = "Wang, \{Shao Wei\} and Hong Wang and Shang, \{Shu Xia\} and Ji Huang and Zhuo Wang and Min Wang",

year = "2000",

month = aug,

day = "2",

doi = "10.1016/S0022-0248(00)00524-8",

language = "英语",

volume = "217",

pages = "388--392",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

number = "4",

}

TY - JOUR

T1 - PZT thin films prepared by chemical solution decomposition using a Bi2Ti2O7 buffer layer

AU - Wang, Shao Wei

AU - Wang, Hong

AU - Shang, Shu Xia

AU - Huang, Ji

AU - Wang, Zhuo

AU - Wang, Min

PY - 2000/8/2

Y1 - 2000/8/2

N2 - A thin-film bilayer structure consisting of polycrystalline Pb(Zr0.5Ti0.5)O3 (PZT) and preferentially (111)-orientated Bi2Ti2O7 were prepared using the chemical solution decomposition (CSD) technique followed by rapid thermal annealing (RTA). The effects of various annealing temperatures and times upon crystallization were investigated. The C-V and dielectric characteristics were measured. The PZT films annealed at 750°C for 10 min consist of a single perovskite phase. The value of leakage current density at 9 V is 3.79 × 10-7 A/cm2. The counterclockwise hysteresis curve observed shows that it is polarization-type switching. The PZT/Bi2Ti2O7 film in the ON and OFF states is relatively stable.

AB - A thin-film bilayer structure consisting of polycrystalline Pb(Zr0.5Ti0.5)O3 (PZT) and preferentially (111)-orientated Bi2Ti2O7 were prepared using the chemical solution decomposition (CSD) technique followed by rapid thermal annealing (RTA). The effects of various annealing temperatures and times upon crystallization were investigated. The C-V and dielectric characteristics were measured. The PZT films annealed at 750°C for 10 min consist of a single perovskite phase. The value of leakage current density at 9 V is 3.79 × 10-7 A/cm2. The counterclockwise hysteresis curve observed shows that it is polarization-type switching. The PZT/Bi2Ti2O7 film in the ON and OFF states is relatively stable.

KW - Chemical solution decomposition

KW - PZT/BiTiO films

KW - X-ray diffraction

UR - https://www.scopus.com/pages/publications/0000499326

U2 - 10.1016/S0022-0248(00)00524-8

DO - 10.1016/S0022-0248(00)00524-8

M3 - 文章

AN - SCOPUS:0000499326

SN - 0022-0248

VL - 217

SP - 388

EP - 392

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 4

ER -

PZT thin films prepared by chemical solution decomposition using a Bi₂Ti₂O₇ buffer layer

Abstract

Keywords

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