Pulsed laser deposition of pyroelectric PCLT thin films on silicon substrates

Ga modified (Pb, La) TiO₃ films were deposited on Pt coated silicon substrates by using an ArF excimer laser. The films are polycrystalline and exhibit good ferroelectric and pyroelectric properties at room temperature. Because of the Ca modification, the figures of merit of the films for both specific detectivity and voltage responsivity are almost comparable with those of c-axis oriented PbTiO₃ or (Pb, La) TiO₃ films on the MgO single crystal substrate. Since these good results were obtained from the films on silicon, it is therefore of significance for monolithic integrated infrared image sensors.