Pseudospin in Si δ-doped InAlAs/InGaAs/InAlAs single quantum well

W. Z. Zhou; Z. M. Huang; Z. J. Qiu; T. Lin; L. Y. Shang; D. L. Li; H. L. Gao; L. J. Cui; Y. P. Zeng; S. L. Guo; Y. S. Gui; N. Dai; J. H. Chu

doi:10.1016/j.ssc.2007.03.014

Pseudospin in Si δ-doped InAlAs/InGaAs/InAlAs single quantum well

W. Z. Zhou, Z. M. Huang, Z. J. Qiu, T. Lin, L. Y. Shang, D. L. Li, H. L. Gao, L. J. Cui, Y. P. Zeng, S. L. Guo, Y. S. Gui, N. Dai, J. H. Chu

School of Physics and Electronic Science

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Magneto-transport measurements have been carried out on double/single-barrier-doped In_0.52Al_0.48As/ In_0.53Ga_0.47As/ In_0.52Al_0.48As quantum well samples from 1.5 to 60 K in an applied magnetic field up to 13 T. Beating Shubnikov-de Haas oscillation is observed for the symmetrically double-barrier-doped sample and demonstrated due to a symmetric state and an antisymmetric state confined in two coupled self-consistent potential wells in the single quantum well. The energy separation between the symmetric and the antisymmetric states for the double-barrier-doped sample is extracted from experimental data, which is consistent with calculation. For the single-barrier-doped sample, only beating related to magneto-intersubband scattering shows up. The pesudospin property of the symmetrically double-barrier-doped single quantum well shows that it is a good candidate for fabricating quantum transistors.

Original language	English
Pages (from-to)	393-397
Number of pages	5
Journal	Solid State Communications
Volume	142
Issue number	7
DOIs	https://doi.org/10.1016/j.ssc.2007.03.014
State	Published - May 2007

Keywords

A. Quantum wells
D. Electronic transport
D. Tunnelling

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@article{3cd56f1f97e44659bb4951bfc3f5738c,

title = "Pseudospin in Si δ-doped InAlAs/InGaAs/InAlAs single quantum well",

abstract = "Magneto-transport measurements have been carried out on double/single-barrier-doped In0.52Al0.48As/ In0.53Ga0.47As/ In0.52Al0.48As quantum well samples from 1.5 to 60 K in an applied magnetic field up to 13 T. Beating Shubnikov-de Haas oscillation is observed for the symmetrically double-barrier-doped sample and demonstrated due to a symmetric state and an antisymmetric state confined in two coupled self-consistent potential wells in the single quantum well. The energy separation between the symmetric and the antisymmetric states for the double-barrier-doped sample is extracted from experimental data, which is consistent with calculation. For the single-barrier-doped sample, only beating related to magneto-intersubband scattering shows up. The pesudospin property of the symmetrically double-barrier-doped single quantum well shows that it is a good candidate for fabricating quantum transistors.",

keywords = "A. Quantum wells, D. Electronic transport, D. Tunnelling",

author = "Zhou, \{W. Z.\} and Huang, \{Z. M.\} and Qiu, \{Z. J.\} and T. Lin and Shang, \{L. Y.\} and Li, \{D. L.\} and Gao, \{H. L.\} and Cui, \{L. J.\} and Zeng, \{Y. P.\} and Guo, \{S. L.\} and Gui, \{Y. S.\} and N. Dai and Chu, \{J. H.\}",

year = "2007",

month = may,

doi = "10.1016/j.ssc.2007.03.014",

language = "英语",

volume = "142",

pages = "393--397",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Ltd",

number = "7",

}

TY - JOUR

T1 - Pseudospin in Si δ-doped InAlAs/InGaAs/InAlAs single quantum well

AU - Zhou, W. Z.

AU - Huang, Z. M.

AU - Qiu, Z. J.

AU - Lin, T.

AU - Shang, L. Y.

AU - Li, D. L.

AU - Gao, H. L.

AU - Cui, L. J.

AU - Zeng, Y. P.

AU - Guo, S. L.

AU - Gui, Y. S.

AU - Dai, N.

AU - Chu, J. H.

PY - 2007/5

Y1 - 2007/5

N2 - Magneto-transport measurements have been carried out on double/single-barrier-doped In0.52Al0.48As/ In0.53Ga0.47As/ In0.52Al0.48As quantum well samples from 1.5 to 60 K in an applied magnetic field up to 13 T. Beating Shubnikov-de Haas oscillation is observed for the symmetrically double-barrier-doped sample and demonstrated due to a symmetric state and an antisymmetric state confined in two coupled self-consistent potential wells in the single quantum well. The energy separation between the symmetric and the antisymmetric states for the double-barrier-doped sample is extracted from experimental data, which is consistent with calculation. For the single-barrier-doped sample, only beating related to magneto-intersubband scattering shows up. The pesudospin property of the symmetrically double-barrier-doped single quantum well shows that it is a good candidate for fabricating quantum transistors.

AB - Magneto-transport measurements have been carried out on double/single-barrier-doped In0.52Al0.48As/ In0.53Ga0.47As/ In0.52Al0.48As quantum well samples from 1.5 to 60 K in an applied magnetic field up to 13 T. Beating Shubnikov-de Haas oscillation is observed for the symmetrically double-barrier-doped sample and demonstrated due to a symmetric state and an antisymmetric state confined in two coupled self-consistent potential wells in the single quantum well. The energy separation between the symmetric and the antisymmetric states for the double-barrier-doped sample is extracted from experimental data, which is consistent with calculation. For the single-barrier-doped sample, only beating related to magneto-intersubband scattering shows up. The pesudospin property of the symmetrically double-barrier-doped single quantum well shows that it is a good candidate for fabricating quantum transistors.

KW - A. Quantum wells

KW - D. Electronic transport

KW - D. Tunnelling

UR - https://www.scopus.com/pages/publications/34247181953

U2 - 10.1016/j.ssc.2007.03.014

DO - 10.1016/j.ssc.2007.03.014

M3 - 文章

AN - SCOPUS:34247181953

SN - 0038-1098

VL - 142

SP - 393

EP - 397

JO - Solid State Communications

JF - Solid State Communications

IS - 7

ER -

Pseudospin in Si δ-doped InAlAs/InGaAs/InAlAs single quantum well

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Keywords

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