Properties of Ti–Sb–Te doped with SbSe alloy for application in nonvolatile phase change memory

Lanlan Shen; Sannian Song; Zhitang Song; Le Li; Tianqi Guo; Yan Cheng; Liangcai Wu; Bo Liu; Songlin Feng

doi:10.1007/s10854-016-5608-9

Properties of Ti–Sb–Te doped with SbSe alloy for application in nonvolatile phase change memory

Lanlan Shen^*
, Sannian Song
, Zhitang Song
, Le Li
, Tianqi Guo
, Yan Cheng
, Liangcai Wu
, Bo Liu
, Songlin Feng

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Sb₂Se₃ alloy is used as a dopant for Ti–Sb–Te phase change material aiming to improve the thermal stability of Ti–Sb–Te based phase change memory cell. In this paper, the thermal and electrical properties of Sb₂Se₃-doped Ti_0.32Sb₂Te₃ are respectively investigated. Compared with Ti_0.32Sb₂Te₃ material, (Sb₂Se₃)_0.28(Ti_0.32Sb₂Te₃)_0.72 has better thermal stability with crystallization temperature of 203 °C and estimated 10-year data retention of 102 °C. For the (Sb₂Se₃)_0.28(Ti_0.32Sb₂Te₃)_0.72-based PCM cell, it inherits the advantage of fast switching speed and good endurance of TST based one with wider SET/RESET window. The effects of Sb₂Se₃ doping on the structure of Ti_0.32Sb₂Te₃ are also systemically studied. In crystalline (Sb₂Se₃)_0.28(Ti_0.32Sb₂Te₃)_0.72 film structure, Se is prone to substitute Te and bond with Sb and Te in the Sb₂Te₃ lattice structure which may decrease the crystal lattice constant.

Original language	English
Pages (from-to)	923-927
Number of pages	5
Journal	Journal of Materials Science: Materials in Electronics
Volume	28
Issue number	1
DOIs	https://doi.org/10.1007/s10854-016-5608-9
State	Published - 1 Jan 2017
Externally published	Yes

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@article{db248daa52a84ea0b99124ea5ccb83b0,

title = "Properties of Ti–Sb–Te doped with SbSe alloy for application in nonvolatile phase change memory",

abstract = "Sb2Se3 alloy is used as a dopant for Ti–Sb–Te phase change material aiming to improve the thermal stability of Ti–Sb–Te based phase change memory cell. In this paper, the thermal and electrical properties of Sb2Se3-doped Ti0.32Sb2Te3 are respectively investigated. Compared with Ti0.32Sb2Te3 material, (Sb2Se3)0.28(Ti0.32Sb2Te3)0.72 has better thermal stability with crystallization temperature of 203 °C and estimated 10-year data retention of 102 °C. For the (Sb2Se3)0.28(Ti0.32Sb2Te3)0.72-based PCM cell, it inherits the advantage of fast switching speed and good endurance of TST based one with wider SET/RESET window. The effects of Sb2Se3 doping on the structure of Ti0.32Sb2Te3 are also systemically studied. In crystalline (Sb2Se3)0.28(Ti0.32Sb2Te3)0.72 film structure, Se is prone to substitute Te and bond with Sb and Te in the Sb2Te3 lattice structure which may decrease the crystal lattice constant.",

author = "Lanlan Shen and Sannian Song and Zhitang Song and Le Li and Tianqi Guo and Yan Cheng and Liangcai Wu and Bo Liu and Songlin Feng",

note = "Publisher Copyright: {\textcopyright} 2016, Springer Science+Business Media New York.",

year = "2017",

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doi = "10.1007/s10854-016-5608-9",

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T1 - Properties of Ti–Sb–Te doped with SbSe alloy for application in nonvolatile phase change memory

AU - Shen, Lanlan

AU - Song, Sannian

AU - Song, Zhitang

AU - Li, Le

AU - Guo, Tianqi

AU - Cheng, Yan

AU - Wu, Liangcai

AU - Liu, Bo

AU - Feng, Songlin

PY - 2017/1/1

Y1 - 2017/1/1

N2 - Sb2Se3 alloy is used as a dopant for Ti–Sb–Te phase change material aiming to improve the thermal stability of Ti–Sb–Te based phase change memory cell. In this paper, the thermal and electrical properties of Sb2Se3-doped Ti0.32Sb2Te3 are respectively investigated. Compared with Ti0.32Sb2Te3 material, (Sb2Se3)0.28(Ti0.32Sb2Te3)0.72 has better thermal stability with crystallization temperature of 203 °C and estimated 10-year data retention of 102 °C. For the (Sb2Se3)0.28(Ti0.32Sb2Te3)0.72-based PCM cell, it inherits the advantage of fast switching speed and good endurance of TST based one with wider SET/RESET window. The effects of Sb2Se3 doping on the structure of Ti0.32Sb2Te3 are also systemically studied. In crystalline (Sb2Se3)0.28(Ti0.32Sb2Te3)0.72 film structure, Se is prone to substitute Te and bond with Sb and Te in the Sb2Te3 lattice structure which may decrease the crystal lattice constant.

AB - Sb2Se3 alloy is used as a dopant for Ti–Sb–Te phase change material aiming to improve the thermal stability of Ti–Sb–Te based phase change memory cell. In this paper, the thermal and electrical properties of Sb2Se3-doped Ti0.32Sb2Te3 are respectively investigated. Compared with Ti0.32Sb2Te3 material, (Sb2Se3)0.28(Ti0.32Sb2Te3)0.72 has better thermal stability with crystallization temperature of 203 °C and estimated 10-year data retention of 102 °C. For the (Sb2Se3)0.28(Ti0.32Sb2Te3)0.72-based PCM cell, it inherits the advantage of fast switching speed and good endurance of TST based one with wider SET/RESET window. The effects of Sb2Se3 doping on the structure of Ti0.32Sb2Te3 are also systemically studied. In crystalline (Sb2Se3)0.28(Ti0.32Sb2Te3)0.72 film structure, Se is prone to substitute Te and bond with Sb and Te in the Sb2Te3 lattice structure which may decrease the crystal lattice constant.

UR - https://www.scopus.com/pages/publications/84983738787

U2 - 10.1007/s10854-016-5608-9

DO - 10.1007/s10854-016-5608-9

M3 - 文章

AN - SCOPUS:84983738787

SN - 0957-4522

VL - 28

SP - 923

EP - 927

JO - Journal of Materials Science: Materials in Electronics

JF - Journal of Materials Science: Materials in Electronics

IS - 1

ER -

Properties of Ti–Sb–Te doped with SbSe alloy for application in nonvolatile phase change memory

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