Progress on nBn infrared detectors

Qian Shi; Shu Kui Zhang; Jian Lu Wang; Jun Hao Chu

doi:10.11972/j.issn.1001-9014.2022.01.010

Progress on nBn infrared detectors

Qian Shi
, Shu Kui Zhang^*
, Jian Lu Wang^*
, Jun Hao Chu

^*Corresponding author for this work

Research output: Contribution to journal › Review article › peer-review

17 Scopus citations

Abstract

The nBn infrared (IR) detector is designed to eliminate the Shockley-Read-Hall (SRH) generation-recombination (G-R) currents, which will effectively reduce the dark current and increase the operating temperature of the detector. Due to the compatibility of the manufacturing process and the existence of a substrate with a perfectly matched lattice, the nBn infrared detectors based on III-V compounds including type-II superlattice (T2SLs) materials have been developed rapidly. Through theoretical simulation, the nBn infrared detector based on the HgCdTe material system can also effectively suppress the dark current. However, the difficulty of removing the valence band barrier hinders HgCdTe nBn infrared detector development. This review will elaborate on the physical mechanism of nBn detectors to suppress dark current, and then introduce the development status and development trend of nBn barrier detectors in different semiconductor materials.

Translated title of the contribution	nBn红外探测器研究进展
Original language	English
Pages (from-to)	139-150
Number of pages	12
Journal	Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves
Volume	41
Issue number	1
DOIs	https://doi.org/10.11972/j.issn.1001-9014.2022.01.010
State	Published - Feb 2022
Externally published	Yes

Keywords

HgCdTe
NBn infrared detector
Sb-based III-V semiconductor
Type-II superlattice

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10.11972/j.issn.1001-9014.2022.01.010

Cite this

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title = "Progress on nBn infrared detectors",

abstract = "The nBn infrared (IR) detector is designed to eliminate the Shockley-Read-Hall (SRH) generation-recombination (G-R) currents, which will effectively reduce the dark current and increase the operating temperature of the detector. Due to the compatibility of the manufacturing process and the existence of a substrate with a perfectly matched lattice, the nBn infrared detectors based on III-V compounds including type-II superlattice (T2SLs) materials have been developed rapidly. Through theoretical simulation, the nBn infrared detector based on the HgCdTe material system can also effectively suppress the dark current. However, the difficulty of removing the valence band barrier hinders HgCdTe nBn infrared detector development. This review will elaborate on the physical mechanism of nBn detectors to suppress dark current, and then introduce the development status and development trend of nBn barrier detectors in different semiconductor materials.",

keywords = "HgCdTe, NBn infrared detector, Sb-based III-V semiconductor, Type-II superlattice",

author = "Qian Shi and Zhang, \{Shu Kui\} and Wang, \{Jian Lu\} and Chu, \{Jun Hao\}",

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month = feb,

doi = "10.11972/j.issn.1001-9014.2022.01.010",

language = "英语",

volume = "41",

pages = "139--150",

journal = "Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves",

issn = "1001-9014",

publisher = "Chinese Optical Society",

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T1 - Progress on nBn infrared detectors

AU - Shi, Qian

AU - Zhang, Shu Kui

AU - Wang, Jian Lu

AU - Chu, Jun Hao

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N2 - The nBn infrared (IR) detector is designed to eliminate the Shockley-Read-Hall (SRH) generation-recombination (G-R) currents, which will effectively reduce the dark current and increase the operating temperature of the detector. Due to the compatibility of the manufacturing process and the existence of a substrate with a perfectly matched lattice, the nBn infrared detectors based on III-V compounds including type-II superlattice (T2SLs) materials have been developed rapidly. Through theoretical simulation, the nBn infrared detector based on the HgCdTe material system can also effectively suppress the dark current. However, the difficulty of removing the valence band barrier hinders HgCdTe nBn infrared detector development. This review will elaborate on the physical mechanism of nBn detectors to suppress dark current, and then introduce the development status and development trend of nBn barrier detectors in different semiconductor materials.

AB - The nBn infrared (IR) detector is designed to eliminate the Shockley-Read-Hall (SRH) generation-recombination (G-R) currents, which will effectively reduce the dark current and increase the operating temperature of the detector. Due to the compatibility of the manufacturing process and the existence of a substrate with a perfectly matched lattice, the nBn infrared detectors based on III-V compounds including type-II superlattice (T2SLs) materials have been developed rapidly. Through theoretical simulation, the nBn infrared detector based on the HgCdTe material system can also effectively suppress the dark current. However, the difficulty of removing the valence band barrier hinders HgCdTe nBn infrared detector development. This review will elaborate on the physical mechanism of nBn detectors to suppress dark current, and then introduce the development status and development trend of nBn barrier detectors in different semiconductor materials.

KW - HgCdTe

KW - NBn infrared detector

KW - Sb-based III-V semiconductor

KW - Type-II superlattice

UR - https://www.scopus.com/pages/publications/85126105201

U2 - 10.11972/j.issn.1001-9014.2022.01.010

DO - 10.11972/j.issn.1001-9014.2022.01.010

M3 - 文献综述

AN - SCOPUS:85126105201

SN - 1001-9014

VL - 41

SP - 139

EP - 150

JO - Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves

JF - Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves

IS - 1

ER -

Progress on nBn infrared detectors

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Keywords

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