TY - GEN
T1 - Progress on Mn-Co-Ni-O infrared thin films and detectors
AU - Huang, Zhiming
AU - Ouyang, Cheng
AU - Zhou, Wei
AU - Tong, Jingchao
AU - Huang, Jingguo
AU - Wu, Jing
AU - Gao, Yanqing
AU - Chu, Junhao
N1 - Publisher Copyright:
© 2014 IEEE.
PY - 2014/11/13
Y1 - 2014/11/13
N2 - High quality Mn-Co-Ni-O (MCN) spinel films are prepared on Al2O3 substrate by RF magnetron sputtering (RF) and chemical solution deposition (CSD). The microstructural characterizations reveal the films present excellent crystallization and compact surface. The variable temperature electrical results show the films have temperature coefficient of resistance (TCR) of -3.8 %/K at 295 K. Based on the electrical results of CSD-MCN films in 130∼304 K, we find that the hopping exponent p of small polaron hopping conduction shows a clear variation from a value of 0.46 in the paramagnetic to 0.91 in the ferromagnetic phase at around 200 K. The mid-infrared optical properties of the films are obtained by fitting the measured ellipsometric parameter data using the classical infrared model. MCN film detectors are fabricated by photolithography follow by wet etching process to evaluate the applications for infrared detection. It exhibits a noise equivalent temperature difference as low as 2.1×10-7 K/Hz1/2, responsivity of 330 V/W, and detectivity of 0.6×108 cmHz1/2/W at 30 Hz. The 8×1 element MCN detector array is also successfully fabricated, and the response uniformity is about 5.9 %.
AB - High quality Mn-Co-Ni-O (MCN) spinel films are prepared on Al2O3 substrate by RF magnetron sputtering (RF) and chemical solution deposition (CSD). The microstructural characterizations reveal the films present excellent crystallization and compact surface. The variable temperature electrical results show the films have temperature coefficient of resistance (TCR) of -3.8 %/K at 295 K. Based on the electrical results of CSD-MCN films in 130∼304 K, we find that the hopping exponent p of small polaron hopping conduction shows a clear variation from a value of 0.46 in the paramagnetic to 0.91 in the ferromagnetic phase at around 200 K. The mid-infrared optical properties of the films are obtained by fitting the measured ellipsometric parameter data using the classical infrared model. MCN film detectors are fabricated by photolithography follow by wet etching process to evaluate the applications for infrared detection. It exhibits a noise equivalent temperature difference as low as 2.1×10-7 K/Hz1/2, responsivity of 330 V/W, and detectivity of 0.6×108 cmHz1/2/W at 30 Hz. The 8×1 element MCN detector array is also successfully fabricated, and the response uniformity is about 5.9 %.
UR - https://www.scopus.com/pages/publications/84911965321
U2 - 10.1109/IRMMW-THz.2014.6956061
DO - 10.1109/IRMMW-THz.2014.6956061
M3 - 会议稿件
AN - SCOPUS:84911965321
T3 - International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
BT - 2014 39th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2014
PB - IEEE Computer Society
T2 - 39th International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2014
Y2 - 14 September 2014 through 19 September 2014
ER -