Processing parameters and property of AZO thin film prepared by magnetron sputtering

Hui Kong; Pingxiong Yang; Junhao Chu

doi:10.1088/1742-6596/276/1/012170

Processing parameters and property of AZO thin film prepared by magnetron sputtering

Hui Kong
, Pingxiong Yang^*
, Junhao Chu

^*Corresponding author for this work

School of Physics and Electronic Science

East China Normal University
Shanghai Topsolar Green Energy Co., Ltd.

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

As we all know, transparent and conductive Al:ZnO (AZO) films are being considered for manufacturing transparent electrodes in flat panel displays, solar cells and organic light emitting diodes due to their high electro optical quality, high material availability and low material cost for large area applications. In this experiment, AZO thin films were prepared on glass substrate by Magnetron Sputtering method with a 2wt % Al -doped ceramic target .The processing parameters on electrical properties of AZO thin film were investigated. When processing pressure is 0.8Pa,the sputtering power is 225W,the temperature of substrate is 225°, the AZO thin films have a lowest resistivity of 9.81×10^-4 Ω.cm and visible light transmittance of more than 85%.

Original language	English
Article number	012170
Journal	Journal of Physics: Conference Series
Volume	276
Issue number	1
DOIs	https://doi.org/10.1088/1742-6596/276/1/012170
State	Published - 2011

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title = "Processing parameters and property of AZO thin film prepared by magnetron sputtering",

abstract = "As we all know, transparent and conductive Al:ZnO (AZO) films are being considered for manufacturing transparent electrodes in flat panel displays, solar cells and organic light emitting diodes due to their high electro optical quality, high material availability and low material cost for large area applications. In this experiment, AZO thin films were prepared on glass substrate by Magnetron Sputtering method with a 2wt \% Al -doped ceramic target .The processing parameters on electrical properties of AZO thin film were investigated. When processing pressure is 0.8Pa,the sputtering power is 225W,the temperature of substrate is 225°, the AZO thin films have a lowest resistivity of 9.81×10-4 Ω.cm and visible light transmittance of more than 85\%.",

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AU - Kong, Hui

AU - Yang, Pingxiong

AU - Chu, Junhao

PY - 2011

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N2 - As we all know, transparent and conductive Al:ZnO (AZO) films are being considered for manufacturing transparent electrodes in flat panel displays, solar cells and organic light emitting diodes due to their high electro optical quality, high material availability and low material cost for large area applications. In this experiment, AZO thin films were prepared on glass substrate by Magnetron Sputtering method with a 2wt % Al -doped ceramic target .The processing parameters on electrical properties of AZO thin film were investigated. When processing pressure is 0.8Pa,the sputtering power is 225W,the temperature of substrate is 225°, the AZO thin films have a lowest resistivity of 9.81×10-4 Ω.cm and visible light transmittance of more than 85%.

AB - As we all know, transparent and conductive Al:ZnO (AZO) films are being considered for manufacturing transparent electrodes in flat panel displays, solar cells and organic light emitting diodes due to their high electro optical quality, high material availability and low material cost for large area applications. In this experiment, AZO thin films were prepared on glass substrate by Magnetron Sputtering method with a 2wt % Al -doped ceramic target .The processing parameters on electrical properties of AZO thin film were investigated. When processing pressure is 0.8Pa,the sputtering power is 225W,the temperature of substrate is 225°, the AZO thin films have a lowest resistivity of 9.81×10-4 Ω.cm and visible light transmittance of more than 85%.

UR - https://www.scopus.com/pages/publications/79953842385

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M3 - 文章

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VL - 276

JO - Journal of Physics: Conference Series

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ER -

Processing parameters and property of AZO thin film prepared by magnetron sputtering

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