Probing and manipulating the interfacial defects of InGaAs dual-layer metal oxides at the atomic scale

Xing Wu; Chen Luo; Peng Hao; Tao Sun; Runsheng Wang; Chaolun Wang; Zhigao Hu; Yawei Li; Jian Zhang; Gennadi Bersuker; Litao Sun; Kinleong Pey

doi:10.1109/CSTIC.2018.8369288

Probing and manipulating the interfacial defects of InGaAs dual-layer metal oxides at the atomic scale

Xing Wu, Chen Luo, Peng Hao, Tao Sun, Runsheng Wang, Chaolun Wang, Zhigao Hu, Yawei Li, Jian Zhang, Gennadi Bersuker, Litao Sun, Kinleong Pey

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The interface between III-V and metal-oxide-semiconductor materials plays a central role in the operation of high-speed electronic devices, such as transistors and light-emitting diodes. The design of high-performance devices requires a detailed understanding of the electronic structure at the interface. However, the relation between the interface state charges to the electrical failure, such as breakdown of the oxide in the transistor remains unknown. Herein, the defect-driven interfacial electron structure of the Ti/ZrO₂/Al₂O₃/InGaAs system are probed and manipulated using a specifically designed in situ transmission electron microscopy experimental method. The interfacial defects induced by oxygen-atom missing is found the main reason for the device failure. This study unearths the fundamental defect-driven interfacial electric structure of III-V semiconductor materials and paves the way to future high-speed and high-reliability devices.

Original language	English
Title of host publication	China Semiconductor Technology International Conference 2018, CSTIC 2018
Editors	Hanming Wu, Peilin Song, Qinghuang Lin, Yuchun Wang, Cor Claeys, Hsiang-Lang Lung, Ying Zhang, Steve Liang, Yiyu Shi, Ru Huang, Zhen Guo, Kafai Lai
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1-3
Number of pages	3
ISBN (Electronic)	9781538653081
DOIs	https://doi.org/10.1109/CSTIC.2018.8369288
State	Published - 29 May 2018
Event	2018 China Semiconductor Technology International Conference, CSTIC 2018 - Shanghai, China Duration: 11 Mar 2018 → 12 Mar 2018

Publication series

Name	China Semiconductor Technology International Conference 2018, CSTIC 2018

Conference

Conference	2018 China Semiconductor Technology International Conference, CSTIC 2018
Country/Territory	China
City	Shanghai
Period	11/03/18 → 12/03/18

Keywords

III-V semiconductors
breakdown
in situ transmission electron microscope
inter facial defects
oxygen vacancies

Access to Document

10.1109/CSTIC.2018.8369288

Cite this

Wu, X., Luo, C., Hao, P., Sun, T., Wang, R., Wang, C., Hu, Z., Li, Y., Zhang, J., Bersuker, G., Sun, L., & Pey, K. (2018). Probing and manipulating the interfacial defects of InGaAs dual-layer metal oxides at the atomic scale. In H. Wu, P. Song, Q. Lin, Y. Wang, C. Claeys, H.-L. Lung, Y. Zhang, S. Liang, Y. Shi, R. Huang, Z. Guo, & K. Lai (Eds.), China Semiconductor Technology International Conference 2018, CSTIC 2018 (pp. 1-3). (China Semiconductor Technology International Conference 2018, CSTIC 2018). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/CSTIC.2018.8369288

Wu, Xing ; Luo, Chen ; Hao, Peng et al. / Probing and manipulating the interfacial defects of InGaAs dual-layer metal oxides at the atomic scale. China Semiconductor Technology International Conference 2018, CSTIC 2018. editor / Hanming Wu ; Peilin Song ; Qinghuang Lin ; Yuchun Wang ; Cor Claeys ; Hsiang-Lang Lung ; Ying Zhang ; Steve Liang ; Yiyu Shi ; Ru Huang ; Zhen Guo ; Kafai Lai. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 1-3 (China Semiconductor Technology International Conference 2018, CSTIC 2018).

@inproceedings{10774532a1c54a408cfda11092d7d80b,

title = "Probing and manipulating the interfacial defects of InGaAs dual-layer metal oxides at the atomic scale",

abstract = "The interface between III-V and metal-oxide-semiconductor materials plays a central role in the operation of high-speed electronic devices, such as transistors and light-emitting diodes. The design of high-performance devices requires a detailed understanding of the electronic structure at the interface. However, the relation between the interface state charges to the electrical failure, such as breakdown of the oxide in the transistor remains unknown. Herein, the defect-driven interfacial electron structure of the Ti/ZrO2/Al2O3/InGaAs system are probed and manipulated using a specifically designed in situ transmission electron microscopy experimental method. The interfacial defects induced by oxygen-atom missing is found the main reason for the device failure. This study unearths the fundamental defect-driven interfacial electric structure of III-V semiconductor materials and paves the way to future high-speed and high-reliability devices.",

keywords = "III-V semiconductors, breakdown, in situ transmission electron microscope, inter facial defects, oxygen vacancies",

author = "Xing Wu and Chen Luo and Peng Hao and Tao Sun and Runsheng Wang and Chaolun Wang and Zhigao Hu and Yawei Li and Jian Zhang and Gennadi Bersuker and Litao Sun and Kinleong Pey",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 2018 China Semiconductor Technology International Conference, CSTIC 2018 ; Conference date: 11-03-2018 Through 12-03-2018",

year = "2018",

month = may,

day = "29",

doi = "10.1109/CSTIC.2018.8369288",

language = "英语",

series = "China Semiconductor Technology International Conference 2018, CSTIC 2018",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "1--3",

editor = "Hanming Wu and Peilin Song and Qinghuang Lin and Yuchun Wang and Cor Claeys and Hsiang-Lang Lung and Ying Zhang and Steve Liang and Yiyu Shi and Ru Huang and Zhen Guo and Kafai Lai",

booktitle = "China Semiconductor Technology International Conference 2018, CSTIC 2018",

address = "美国",

}

Wu, X, Luo, C, Hao, P, Sun, T, Wang, R, Wang, C, Hu, Z, Li, Y, Zhang, J, Bersuker, G, Sun, L & Pey, K 2018, Probing and manipulating the interfacial defects of InGaAs dual-layer metal oxides at the atomic scale. in H Wu, P Song, Q Lin, Y Wang, C Claeys, H-L Lung, Y Zhang, S Liang, Y Shi, R Huang, Z Guo & K Lai (eds), China Semiconductor Technology International Conference 2018, CSTIC 2018. China Semiconductor Technology International Conference 2018, CSTIC 2018, Institute of Electrical and Electronics Engineers Inc., pp. 1-3, 2018 China Semiconductor Technology International Conference, CSTIC 2018, Shanghai, China, 11/03/18. https://doi.org/10.1109/CSTIC.2018.8369288

Probing and manipulating the interfacial defects of InGaAs dual-layer metal oxides at the atomic scale. / Wu, Xing; Luo, Chen; Hao, Peng et al.
China Semiconductor Technology International Conference 2018, CSTIC 2018. ed. / Hanming Wu; Peilin Song; Qinghuang Lin; Yuchun Wang; Cor Claeys; Hsiang-Lang Lung; Ying Zhang; Steve Liang; Yiyu Shi; Ru Huang; Zhen Guo; Kafai Lai. Institute of Electrical and Electronics Engineers Inc., 2018. p. 1-3 (China Semiconductor Technology International Conference 2018, CSTIC 2018).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Probing and manipulating the interfacial defects of InGaAs dual-layer metal oxides at the atomic scale

AU - Wu, Xing

AU - Luo, Chen

AU - Hao, Peng

AU - Sun, Tao

AU - Wang, Runsheng

AU - Wang, Chaolun

AU - Hu, Zhigao

AU - Li, Yawei

AU - Zhang, Jian

AU - Bersuker, Gennadi

AU - Sun, Litao

AU - Pey, Kinleong

PY - 2018/5/29

Y1 - 2018/5/29

N2 - The interface between III-V and metal-oxide-semiconductor materials plays a central role in the operation of high-speed electronic devices, such as transistors and light-emitting diodes. The design of high-performance devices requires a detailed understanding of the electronic structure at the interface. However, the relation between the interface state charges to the electrical failure, such as breakdown of the oxide in the transistor remains unknown. Herein, the defect-driven interfacial electron structure of the Ti/ZrO2/Al2O3/InGaAs system are probed and manipulated using a specifically designed in situ transmission electron microscopy experimental method. The interfacial defects induced by oxygen-atom missing is found the main reason for the device failure. This study unearths the fundamental defect-driven interfacial electric structure of III-V semiconductor materials and paves the way to future high-speed and high-reliability devices.

AB - The interface between III-V and metal-oxide-semiconductor materials plays a central role in the operation of high-speed electronic devices, such as transistors and light-emitting diodes. The design of high-performance devices requires a detailed understanding of the electronic structure at the interface. However, the relation between the interface state charges to the electrical failure, such as breakdown of the oxide in the transistor remains unknown. Herein, the defect-driven interfacial electron structure of the Ti/ZrO2/Al2O3/InGaAs system are probed and manipulated using a specifically designed in situ transmission electron microscopy experimental method. The interfacial defects induced by oxygen-atom missing is found the main reason for the device failure. This study unearths the fundamental defect-driven interfacial electric structure of III-V semiconductor materials and paves the way to future high-speed and high-reliability devices.

KW - III-V semiconductors

KW - breakdown

KW - in situ transmission electron microscope

KW - inter facial defects

KW - oxygen vacancies

UR - https://www.scopus.com/pages/publications/85048886077

U2 - 10.1109/CSTIC.2018.8369288

DO - 10.1109/CSTIC.2018.8369288

M3 - 会议稿件

AN - SCOPUS:85048886077

T3 - China Semiconductor Technology International Conference 2018, CSTIC 2018

SP - 1

EP - 3

BT - China Semiconductor Technology International Conference 2018, CSTIC 2018

A2 - Wu, Hanming

A2 - Song, Peilin

A2 - Lin, Qinghuang

A2 - Wang, Yuchun

A2 - Claeys, Cor

A2 - Lung, Hsiang-Lang

A2 - Zhang, Ying

A2 - Liang, Steve

A2 - Shi, Yiyu

A2 - Huang, Ru

A2 - Guo, Zhen

A2 - Lai, Kafai

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2018 China Semiconductor Technology International Conference, CSTIC 2018

Y2 - 11 March 2018 through 12 March 2018

ER -

Wu X, Luo C, Hao P, Sun T, Wang R, Wang C et al. Probing and manipulating the interfacial defects of InGaAs dual-layer metal oxides at the atomic scale. In Wu H, Song P, Lin Q, Wang Y, Claeys C, Lung HL, Zhang Y, Liang S, Shi Y, Huang R, Guo Z, Lai K, editors, China Semiconductor Technology International Conference 2018, CSTIC 2018. Institute of Electrical and Electronics Engineers Inc. 2018. p. 1-3. (China Semiconductor Technology International Conference 2018, CSTIC 2018). doi: 10.1109/CSTIC.2018.8369288

Probing and manipulating the interfacial defects of InGaAs dual-layer metal oxides at the atomic scale

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Keywords

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