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Preparation of ZnMnO by ion implantation and its spectral characterization

  • Hong Mei Zhong*
  • , Xiao Shuang Chen
  • , Jin Bin Wang
  • , Chang Sheng Xia
  • , Shao Wei Wang
  • , Zhi Feng Li
  • , Wen Lan Xu
  • , Wei Lu
  • *Corresponding author for this work
  • CAS - Shanghai Institute of Technical Physics

Research output: Contribution to journalArticlepeer-review

Abstract

This paper reports the fabrication of ZnMnO semiconductor by high-dose Mn implantion. We studied the influence of implantation dose and annealing on its optical properties. The broad band at 575 cm-1 in Raman spectrum is attributed to defects related to high-dose Mn implantation. The vibration modes at 528 cm-1 are considered to be associated with Mn impurities. Room temperature photoluminescence spectra show that the high-dose Mn implantation can enhance the intensity in visible band.

Original languageEnglish
Pages (from-to)2073-2077
Number of pages5
JournalWuli Xuebao/Acta Physica Sinica
Volume55
Issue number4
DOIs
StatePublished - Apr 2006
Externally publishedYes

Keywords

  • Ion implantation
  • Raman spectrum
  • Room photoluminescence properties
  • ZnMnO

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