Abstract
This paper reports the fabrication of ZnMnO semiconductor by high-dose Mn implantion. We studied the influence of implantation dose and annealing on its optical properties. The broad band at 575 cm-1 in Raman spectrum is attributed to defects related to high-dose Mn implantation. The vibration modes at 528 cm-1 are considered to be associated with Mn impurities. Room temperature photoluminescence spectra show that the high-dose Mn implantation can enhance the intensity in visible band.
| Original language | English |
|---|---|
| Pages (from-to) | 2073-2077 |
| Number of pages | 5 |
| Journal | Wuli Xuebao/Acta Physica Sinica |
| Volume | 55 |
| Issue number | 4 |
| DOIs | |
| State | Published - Apr 2006 |
| Externally published | Yes |
Keywords
- Ion implantation
- Raman spectrum
- Room photoluminescence properties
- ZnMnO
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