Preparation of thick GeO2 glass film with high UV photosensitivity

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Abstract

Hexagonal GeO2 ceramic films were fabricated at room temperature via an acid induced liquid phase deposition (LPD) method. Thick GeO2 glass films were prepared using a melting and quick cooling technique. The glass films were annealed in a mixed hydrogen/nitrogen gas atmosphere to create more oxygen vacancies. The intensity of 5-eV absorption band enhances with increase of annealing temperature as well as time. The activation energy of oxygen vacancy formation is calculated to be 0.91 ± 0.05 eV. The 5-eV absorption band is photobleachable, and the saturated absorptivity change reaches 575 ± 17 cm- 1.

Original languageEnglish
Pages (from-to)2884-2888
Number of pages5
JournalJournal of Non-Crystalline Solids
Volume356
Issue number50-51
DOIs
StatePublished - Nov 2010
Externally publishedYes

Keywords

  • 5-eV absorption band
  • Activation energy
  • Thick GeO glass film
  • UV photosensitivity

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