Preparation of SnO2/MCM-41 semiconducter sensors with MOCVD and their properties

Xiu Li Liu; Guo Hua Gao; Sibudjing Kawi

Preparation of SnO₂/MCM-41 semiconducter sensors with MOCVD and their properties

Xiu Li Liu, Guo Hua Gao, Sibudjing Kawi

School of Chemistry and Molecular Engineering

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

SnO₂/MCM-41 semiconductor sensors were prepared by metallorganic chemical vapor deposition (MOCVD). The amount of deposition, specific surface area and pore distribution of SnO₂/MCM-41 depend on the deposition time and temperatures. The fact that pore size are closely related with the amount of deposition indicates that SnO₂ is coated smoothly in the pore of MCM-41. SnO₂/MCM-41 sensor has high sensitivities for CO and H₂. The sensitivities show a linear relation with the concentration of CO and H₂.

Original language	English
Pages (from-to)	1609-1612
Number of pages	4
Journal	Kao Teng Hsueh Hsiao Hua Heush Hsueh Pao/ Chemical Journal of Chinese Universities
Volume	28
Issue number	9
State	Published - Sep 2007

Keywords

MCM-41
MOCVD
Semiconductor sensor
Thin film
Tin dioxide

Cite this

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title = "Preparation of SnO2/MCM-41 semiconducter sensors with MOCVD and their properties",

abstract = "SnO2/MCM-41 semiconductor sensors were prepared by metallorganic chemical vapor deposition (MOCVD). The amount of deposition, specific surface area and pore distribution of SnO2/MCM-41 depend on the deposition time and temperatures. The fact that pore size are closely related with the amount of deposition indicates that SnO2 is coated smoothly in the pore of MCM-41. SnO2/MCM-41 sensor has high sensitivities for CO and H2. The sensitivities show a linear relation with the concentration of CO and H2.",

keywords = "MCM-41, MOCVD, Semiconductor sensor, Thin film, Tin dioxide",

author = "Liu, \{Xiu Li\} and Gao, \{Guo Hua\} and Sibudjing Kawi",

year = "2007",

month = sep,

language = "英语",

volume = "28",

pages = "1609--1612",

journal = "Kao Teng Hsueh Hsiao Hua Heush Hsueh Pao/ Chemical Journal of Chinese Universities",

issn = "0251-0790",

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T1 - Preparation of SnO2/MCM-41 semiconducter sensors with MOCVD and their properties

AU - Liu, Xiu Li

AU - Gao, Guo Hua

AU - Kawi, Sibudjing

PY - 2007/9

Y1 - 2007/9

N2 - SnO2/MCM-41 semiconductor sensors were prepared by metallorganic chemical vapor deposition (MOCVD). The amount of deposition, specific surface area and pore distribution of SnO2/MCM-41 depend on the deposition time and temperatures. The fact that pore size are closely related with the amount of deposition indicates that SnO2 is coated smoothly in the pore of MCM-41. SnO2/MCM-41 sensor has high sensitivities for CO and H2. The sensitivities show a linear relation with the concentration of CO and H2.

AB - SnO2/MCM-41 semiconductor sensors were prepared by metallorganic chemical vapor deposition (MOCVD). The amount of deposition, specific surface area and pore distribution of SnO2/MCM-41 depend on the deposition time and temperatures. The fact that pore size are closely related with the amount of deposition indicates that SnO2 is coated smoothly in the pore of MCM-41. SnO2/MCM-41 sensor has high sensitivities for CO and H2. The sensitivities show a linear relation with the concentration of CO and H2.

KW - MCM-41

KW - MOCVD

KW - Semiconductor sensor

KW - Thin film

KW - Tin dioxide

UR - https://www.scopus.com/pages/publications/35948960335

M3 - 文章

AN - SCOPUS:35948960335

SN - 0251-0790

VL - 28

SP - 1609

EP - 1612

JO - Kao Teng Hsueh Hsiao Hua Heush Hsueh Pao/ Chemical Journal of Chinese Universities

JF - Kao Teng Hsueh Hsiao Hua Heush Hsueh Pao/ Chemical Journal of Chinese Universities

IS - 9

ER -

Preparation of SnO₂/MCM-41 semiconducter sensors with MOCVD and their properties

Abstract

Keywords

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