Preparation of PZT on diamond by pulsed laser deposition with Al2O3 buffer layer

Qing Wan; Ninglin Zhang; Lianwei Wang; Qinwo Shen; Chenglu Lin

doi:10.1016/S0040-6090(02)00495-9

Preparation of PZT on diamond by pulsed laser deposition with Al₂O₃ buffer layer

Qing Wan^*
, Ninglin Zhang
, Lianwei Wang
, Qinwo Shen
, Chenglu Lin

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

For the purpose of broad-bandwidth high frequency surface acoustic wave devices fabrication, we report on the successful preparation of Pb(Zr_0.52Ti_0.48)O₃ (PZT) films by pulsed laser deposition (PLD) process on (1 1 1)-oriented polycrystalline diamond substrates with aluminum oxide (Al₂O₃) as buffer layer. Al₂O₃ was deposited on diamond substrates by high-vacuum electron-beam evaporation method at 200 °C. Then PLD technique was used for PZT deposition. The chemical states of Al and O in Al₂O₃ were investigated by X-ray photoelectron spectroscopy. The surface morphology of Al₂O₃ and PZT films was studied by the atom force microscopy image. X-ray diffraction results showed that before annealing, 350 °C-prepared PZT was amorphous and 550 °C-prepared PZT was (2 2 2)-oriented pyrochlore phase PZT. After rapid thermal annealing at 650 °C, (1 0 1)-oriented pure perovskite phase PZT could be obtained from the 350 °C-prepared PZT film.

Original language	English
Pages (from-to)	64-67
Number of pages	4
Journal	Thin Solid Films
Volume	415
Issue number	1-2
DOIs	https://doi.org/10.1016/S0040-6090(02)00495-9
State	Published - 1 Aug 2002
Externally published	Yes

Keywords

AlO buffer layer
Diamond
Pb(ZrTi)O
Pulsed laser deposition
Surface acoustic wave

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10.1016/S0040-6090(02)00495-9

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@article{73f98e85ecba4f5bbd65f5b11d87635a,

title = "Preparation of PZT on diamond by pulsed laser deposition with Al2O3 buffer layer",

abstract = "For the purpose of broad-bandwidth high frequency surface acoustic wave devices fabrication, we report on the successful preparation of Pb(Zr0.52Ti0.48)O3 (PZT) films by pulsed laser deposition (PLD) process on (1 1 1)-oriented polycrystalline diamond substrates with aluminum oxide (Al2O3) as buffer layer. Al2O3 was deposited on diamond substrates by high-vacuum electron-beam evaporation method at 200 °C. Then PLD technique was used for PZT deposition. The chemical states of Al and O in Al2O3 were investigated by X-ray photoelectron spectroscopy. The surface morphology of Al2O3 and PZT films was studied by the atom force microscopy image. X-ray diffraction results showed that before annealing, 350 °C-prepared PZT was amorphous and 550 °C-prepared PZT was (2 2 2)-oriented pyrochlore phase PZT. After rapid thermal annealing at 650 °C, (1 0 1)-oriented pure perovskite phase PZT could be obtained from the 350 °C-prepared PZT film.",

keywords = "AlO buffer layer, Diamond, Pb(ZrTi)O, Pulsed laser deposition, Surface acoustic wave",

author = "Qing Wan and Ninglin Zhang and Lianwei Wang and Qinwo Shen and Chenglu Lin",

year = "2002",

month = aug,

day = "1",

doi = "10.1016/S0040-6090(02)00495-9",

language = "英语",

volume = "415",

pages = "64--67",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

number = "1-2",

}

TY - JOUR

T1 - Preparation of PZT on diamond by pulsed laser deposition with Al2O3 buffer layer

AU - Wan, Qing

AU - Zhang, Ninglin

AU - Wang, Lianwei

AU - Shen, Qinwo

AU - Lin, Chenglu

PY - 2002/8/1

Y1 - 2002/8/1

N2 - For the purpose of broad-bandwidth high frequency surface acoustic wave devices fabrication, we report on the successful preparation of Pb(Zr0.52Ti0.48)O3 (PZT) films by pulsed laser deposition (PLD) process on (1 1 1)-oriented polycrystalline diamond substrates with aluminum oxide (Al2O3) as buffer layer. Al2O3 was deposited on diamond substrates by high-vacuum electron-beam evaporation method at 200 °C. Then PLD technique was used for PZT deposition. The chemical states of Al and O in Al2O3 were investigated by X-ray photoelectron spectroscopy. The surface morphology of Al2O3 and PZT films was studied by the atom force microscopy image. X-ray diffraction results showed that before annealing, 350 °C-prepared PZT was amorphous and 550 °C-prepared PZT was (2 2 2)-oriented pyrochlore phase PZT. After rapid thermal annealing at 650 °C, (1 0 1)-oriented pure perovskite phase PZT could be obtained from the 350 °C-prepared PZT film.

AB - For the purpose of broad-bandwidth high frequency surface acoustic wave devices fabrication, we report on the successful preparation of Pb(Zr0.52Ti0.48)O3 (PZT) films by pulsed laser deposition (PLD) process on (1 1 1)-oriented polycrystalline diamond substrates with aluminum oxide (Al2O3) as buffer layer. Al2O3 was deposited on diamond substrates by high-vacuum electron-beam evaporation method at 200 °C. Then PLD technique was used for PZT deposition. The chemical states of Al and O in Al2O3 were investigated by X-ray photoelectron spectroscopy. The surface morphology of Al2O3 and PZT films was studied by the atom force microscopy image. X-ray diffraction results showed that before annealing, 350 °C-prepared PZT was amorphous and 550 °C-prepared PZT was (2 2 2)-oriented pyrochlore phase PZT. After rapid thermal annealing at 650 °C, (1 0 1)-oriented pure perovskite phase PZT could be obtained from the 350 °C-prepared PZT film.

KW - AlO buffer layer

KW - Diamond

KW - Pb(ZrTi)O

KW - Pulsed laser deposition

KW - Surface acoustic wave

UR - https://www.scopus.com/pages/publications/0036671732

U2 - 10.1016/S0040-6090(02)00495-9

DO - 10.1016/S0040-6090(02)00495-9

M3 - 文章

AN - SCOPUS:0036671732

SN - 0040-6090

VL - 415

SP - 64

EP - 67

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -

Preparation of PZT on diamond by pulsed laser deposition with Al₂O₃ buffer layer

Abstract

Keywords

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