Preparation of highly (1 0 0)-oriented LaNiO3 nanocrystalline films by metalorganic chemical liquid deposition

G. S. Wang; Q. Zhao; X. J. Meng; J. H. Chu; D. Rémiens

doi:10.1016/j.jcrysgro.2005.01.099

Preparation of highly (1 0 0)-oriented LaNiO₃ nanocrystalline films by metalorganic chemical liquid deposition

G. S. Wang^*
, Q. Zhao
, X. J. Meng
, J. H. Chu
, D. Rémiens

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

45 Scopus citations

Abstract

Lanthanum nickelate LaNiO₃ (LNO) nanocrystalline films have been grown by the metalorganic chemical liquid deposition (MOCLD) technique using lanthanum acetate and nickel acetate as the starting materials. The technique simplified the process of preparation for LNO thin films by chemical solution routes. XRD measurements showed that the LNO films deposited on Si, SiO ₂/Si and Pt/Ti/SiO₂/Si substrates exhibit preferential (1 0 0) orientation. The effects of pyrolysis temperature and thickness on (1 0 0)-orientation parameters of LNO films were investigated. The lowest resistivity film was obtained by annealing at 750 °C. The effects of thickness and annealing temperature on resistivity of the LNO films have been discussed. PbZr_0.4Ti_0.6O₃ (PZT) films deposited onto LNO films displayed a good P-E hysteresis characteristic and fatigue free to 10 ⁸ fatigue cycles.

Original language	English
Pages (from-to)	450-456
Number of pages	7
Journal	Journal of Crystal Growth
Volume	277
Issue number	1-4
DOIs	https://doi.org/10.1016/j.jcrysgro.2005.01.099
State	Published - 15 Apr 2005
Externally published	Yes

Keywords

A1. X-ray diffraction
B1. Perovskite
B2. Oxide superconducting materials

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10.1016/j.jcrysgro.2005.01.099

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@article{a6c1c42c04fd4d6d9642814cf43d7b0f,

title = "Preparation of highly (1 0 0)-oriented LaNiO3 nanocrystalline films by metalorganic chemical liquid deposition",

abstract = "Lanthanum nickelate LaNiO3 (LNO) nanocrystalline films have been grown by the metalorganic chemical liquid deposition (MOCLD) technique using lanthanum acetate and nickel acetate as the starting materials. The technique simplified the process of preparation for LNO thin films by chemical solution routes. XRD measurements showed that the LNO films deposited on Si, SiO 2/Si and Pt/Ti/SiO2/Si substrates exhibit preferential (1 0 0) orientation. The effects of pyrolysis temperature and thickness on (1 0 0)-orientation parameters of LNO films were investigated. The lowest resistivity film was obtained by annealing at 750 °C. The effects of thickness and annealing temperature on resistivity of the LNO films have been discussed. PbZr0.4Ti0.6O3 (PZT) films deposited onto LNO films displayed a good P-E hysteresis characteristic and fatigue free to 10 8 fatigue cycles.",

keywords = "A1. X-ray diffraction, B1. Perovskite, B2. Oxide superconducting materials",

author = "Wang, \{G. S.\} and Q. Zhao and Meng, \{X. J.\} and Chu, \{J. H.\} and D. R{\'e}miens",

year = "2005",

month = apr,

day = "15",

doi = "10.1016/j.jcrysgro.2005.01.099",

language = "英语",

volume = "277",

pages = "450--456",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

number = "1-4",

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TY - JOUR

T1 - Preparation of highly (1 0 0)-oriented LaNiO3 nanocrystalline films by metalorganic chemical liquid deposition

AU - Wang, G. S.

AU - Zhao, Q.

AU - Meng, X. J.

AU - Chu, J. H.

AU - Rémiens, D.

PY - 2005/4/15

Y1 - 2005/4/15

N2 - Lanthanum nickelate LaNiO3 (LNO) nanocrystalline films have been grown by the metalorganic chemical liquid deposition (MOCLD) technique using lanthanum acetate and nickel acetate as the starting materials. The technique simplified the process of preparation for LNO thin films by chemical solution routes. XRD measurements showed that the LNO films deposited on Si, SiO 2/Si and Pt/Ti/SiO2/Si substrates exhibit preferential (1 0 0) orientation. The effects of pyrolysis temperature and thickness on (1 0 0)-orientation parameters of LNO films were investigated. The lowest resistivity film was obtained by annealing at 750 °C. The effects of thickness and annealing temperature on resistivity of the LNO films have been discussed. PbZr0.4Ti0.6O3 (PZT) films deposited onto LNO films displayed a good P-E hysteresis characteristic and fatigue free to 10 8 fatigue cycles.

AB - Lanthanum nickelate LaNiO3 (LNO) nanocrystalline films have been grown by the metalorganic chemical liquid deposition (MOCLD) technique using lanthanum acetate and nickel acetate as the starting materials. The technique simplified the process of preparation for LNO thin films by chemical solution routes. XRD measurements showed that the LNO films deposited on Si, SiO 2/Si and Pt/Ti/SiO2/Si substrates exhibit preferential (1 0 0) orientation. The effects of pyrolysis temperature and thickness on (1 0 0)-orientation parameters of LNO films were investigated. The lowest resistivity film was obtained by annealing at 750 °C. The effects of thickness and annealing temperature on resistivity of the LNO films have been discussed. PbZr0.4Ti0.6O3 (PZT) films deposited onto LNO films displayed a good P-E hysteresis characteristic and fatigue free to 10 8 fatigue cycles.

KW - A1. X-ray diffraction

KW - B1. Perovskite

KW - B2. Oxide superconducting materials

UR - https://www.scopus.com/pages/publications/15844373350

U2 - 10.1016/j.jcrysgro.2005.01.099

DO - 10.1016/j.jcrysgro.2005.01.099

M3 - 文章

AN - SCOPUS:15844373350

SN - 0022-0248

VL - 277

SP - 450

EP - 456

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-4

ER -

Preparation of highly (1 0 0)-oriented LaNiO₃ nanocrystalline films by metalorganic chemical liquid deposition

Abstract

Keywords

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