@inproceedings{367df5b806074990934dde6bbf952cf9,
title = "Preparation of high quality amorphous Al2O3 thin film on silicon and its applications",
abstract = "Al2O3 thin films were deposited on silicon substrates by high-vacuum electron-beam evaporation method at 650°C. Ferroelectric oxide (Pb(Zr0.52Ti0.48)O3) (PZT) films were prepared on the Al2O3 buffer layer by pulsed laser deposition (PLD) method at 350°C and rapid thermal annealing (RTA) at 650°C. X-ray diffraction (XRD), X-ray photoelectron spectroscopes (XPS) and atomic force microscopy (AFM) results show that high quality amorphous Al2O3 could be obtained even at temperature as high as 650°C. XRD result also indicates that highly [101]-oriented perovskite PZT can be obtained on the above mentioned Al2O3 buffer layer.",
keywords = "AlO, MFIS, PZT, gate dielectric film",
author = "Qing Wan and Ninglin Zhang and Lianwei Wang and Qinwo Shen and Chenglu Lin",
note = "Publisher Copyright: {\textcopyright} 2001 IEEE.; 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 ; Conference date: 22-10-2001 Through 25-10-2001",
year = "2001",
doi = "10.1109/ICSICT.2001.982181",
language = "英语",
series = "2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "1468--1470",
editor = "Hiroshi Iwai and Xin-Ping Qu and Bing-Zong Li and Guo-Ping Ru and Paul Yu",
booktitle = "2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings",
address = "美国",
}