Preparation of c-axis-oriented Bi4Ti3O12 thick films by templated grain growth

Ping Hua Xiang; Yoshiaki Kinemuchi; Koji Watari

doi:10.1016/j.jeurceramsoc.2006.04.047

Preparation of c-axis-oriented Bi₄Ti₃O₁₂ thick films by templated grain growth

Ping Hua Xiang
, Yoshiaki Kinemuchi^*
, Koji Watari

^*Corresponding author for this work

National Institute of Advanced Industrial Science and Technology

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

Highly c-axis-oriented Bi₄Ti₃O₁₂ thick films were successfully fabricated by templated grain growth. The effects of template particles and sintering conditions on grain orientation in thick films were investigated. SEM micrographs and X-ray diffraction (XRD) patterns exhibited that thick films were c-axis-oriented. The degree of grain orientation (Lotgering factor, f) increases with increasing sintering temperature and soaking time. Highly c-axis-oriented thick film (orientation degree of ∼ 0.98) is obtained with the use of only 5 wt.% template particles by sintering at 1000 °C for 2 h. This film exhibits a better temperature-independent dielectric constant and a lower dielectric loss.

Original language	English
Pages (from-to)	663-667
Number of pages	5
Journal	Journal of the European Ceramic Society
Volume	27
Issue number	2-3
DOIs	https://doi.org/10.1016/j.jeurceramsoc.2006.04.047
State	Published - 2007
Externally published	Yes

Keywords

Bismuth titanate
Dielectric properties
Microstructure

Access to Document

10.1016/j.jeurceramsoc.2006.04.047

Cite this

@article{c041228f23764cdda87d5e1838faf079,

title = "Preparation of c-axis-oriented Bi4Ti3O12 thick films by templated grain growth",

abstract = "Highly c-axis-oriented Bi4Ti3O12 thick films were successfully fabricated by templated grain growth. The effects of template particles and sintering conditions on grain orientation in thick films were investigated. SEM micrographs and X-ray diffraction (XRD) patterns exhibited that thick films were c-axis-oriented. The degree of grain orientation (Lotgering factor, f) increases with increasing sintering temperature and soaking time. Highly c-axis-oriented thick film (orientation degree of ∼ 0.98) is obtained with the use of only 5 wt.\% template particles by sintering at 1000 °C for 2 h. This film exhibits a better temperature-independent dielectric constant and a lower dielectric loss.",

keywords = "Bismuth titanate, Dielectric properties, Microstructure",

author = "Xiang, \{Ping Hua\} and Yoshiaki Kinemuchi and Koji Watari",

year = "2007",

doi = "10.1016/j.jeurceramsoc.2006.04.047",

language = "英语",

volume = "27",

pages = "663--667",

journal = "Journal of the European Ceramic Society",

issn = "0955-2219",

publisher = "Elsevier B.V.",

number = "2-3",

}

TY - JOUR

T1 - Preparation of c-axis-oriented Bi4Ti3O12 thick films by templated grain growth

AU - Xiang, Ping Hua

AU - Kinemuchi, Yoshiaki

AU - Watari, Koji

PY - 2007

Y1 - 2007

N2 - Highly c-axis-oriented Bi4Ti3O12 thick films were successfully fabricated by templated grain growth. The effects of template particles and sintering conditions on grain orientation in thick films were investigated. SEM micrographs and X-ray diffraction (XRD) patterns exhibited that thick films were c-axis-oriented. The degree of grain orientation (Lotgering factor, f) increases with increasing sintering temperature and soaking time. Highly c-axis-oriented thick film (orientation degree of ∼ 0.98) is obtained with the use of only 5 wt.% template particles by sintering at 1000 °C for 2 h. This film exhibits a better temperature-independent dielectric constant and a lower dielectric loss.

AB - Highly c-axis-oriented Bi4Ti3O12 thick films were successfully fabricated by templated grain growth. The effects of template particles and sintering conditions on grain orientation in thick films were investigated. SEM micrographs and X-ray diffraction (XRD) patterns exhibited that thick films were c-axis-oriented. The degree of grain orientation (Lotgering factor, f) increases with increasing sintering temperature and soaking time. Highly c-axis-oriented thick film (orientation degree of ∼ 0.98) is obtained with the use of only 5 wt.% template particles by sintering at 1000 °C for 2 h. This film exhibits a better temperature-independent dielectric constant and a lower dielectric loss.

KW - Bismuth titanate

KW - Dielectric properties

KW - Microstructure

UR - https://www.scopus.com/pages/publications/33750990748

U2 - 10.1016/j.jeurceramsoc.2006.04.047

DO - 10.1016/j.jeurceramsoc.2006.04.047

M3 - 文章

AN - SCOPUS:33750990748

SN - 0955-2219

VL - 27

SP - 663

EP - 667

JO - Journal of the European Ceramic Society

JF - Journal of the European Ceramic Society

IS - 2-3

ER -

Preparation of c-axis-oriented Bi₄Ti₃O₁₂ thick films by templated grain growth

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this