Preparation and properties of lanthanum strontium cobalt films on Si(1 0 0) by metallorganic chemical liquid deposition

G. S. Wang; Z. Q. Lai; J. Yu; S. L. Guo; J. H. Chu; G. Li; Q. H. Lu

doi:10.1016/S0022-0248(01)01603-7

Preparation and properties of lanthanum strontium cobalt films on Si(1 0 0) by metallorganic chemical liquid deposition

G. S. Wang^*
, Z. Q. Lai
, J. Yu
, S. L. Guo
, J. H. Chu
, G. Li
, Q. H. Lu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

Lanthanum strontium cobalt La_0.5Sr_0.5CoO₃ (LSCO) films have been grown on Si(1 0 0) substrate by metallorganic chemical liquid deposition (MOCLD) technique using lanthanum acetate, strontium acetate and cobalt acetate as the starting materials. The technique simplified the preparation of LSCO thin films by chemical solution routes. The films were crystallized by rapid thermal annealing (RTA) process. The films annealed between 600°C and 750°C are entirely in the perovskite phase and show good conductivity. The lowest resistivity (950 μΩ cm) thin films were obtained by annealing at 750°C. The size effect of sheet resistance of the LSCO films has been discussed. PbZr_0.5Ti_0.5O₃ (PZT) films deposited onto LSCO films displayed a good P-E hysteresis characteristic.

Original language	English
Pages (from-to)	512-516
Number of pages	5
Journal	Journal of Crystal Growth
Volume	233
Issue number	3
DOIs	https://doi.org/10.1016/S0022-0248(01)01603-7
State	Published - Dec 2001
Externally published	Yes

Keywords

A1. X-ray diffraction
B1. perovskites
B2. oxide superconducting materials

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10.1016/S0022-0248(01)01603-7

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@article{927037272435426fa4985c111bb3ff6c,

title = "Preparation and properties of lanthanum strontium cobalt films on Si(1 0 0) by metallorganic chemical liquid deposition",

abstract = "Lanthanum strontium cobalt La0.5Sr0.5CoO3 (LSCO) films have been grown on Si(1 0 0) substrate by metallorganic chemical liquid deposition (MOCLD) technique using lanthanum acetate, strontium acetate and cobalt acetate as the starting materials. The technique simplified the preparation of LSCO thin films by chemical solution routes. The films were crystallized by rapid thermal annealing (RTA) process. The films annealed between 600°C and 750°C are entirely in the perovskite phase and show good conductivity. The lowest resistivity (950 μΩ cm) thin films were obtained by annealing at 750°C. The size effect of sheet resistance of the LSCO films has been discussed. PbZr0.5Ti0.5O3 (PZT) films deposited onto LSCO films displayed a good P-E hysteresis characteristic.",

keywords = "A1. X-ray diffraction, B1. perovskites, B2. oxide superconducting materials",

author = "Wang, \{G. S.\} and Lai, \{Z. Q.\} and J. Yu and Guo, \{S. L.\} and Chu, \{J. H.\} and G. Li and Lu, \{Q. H.\}",

year = "2001",

month = dec,

doi = "10.1016/S0022-0248(01)01603-7",

language = "英语",

volume = "233",

pages = "512--516",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

number = "3",

}

TY - JOUR

T1 - Preparation and properties of lanthanum strontium cobalt films on Si(1 0 0) by metallorganic chemical liquid deposition

AU - Wang, G. S.

AU - Lai, Z. Q.

AU - Yu, J.

AU - Guo, S. L.

AU - Chu, J. H.

AU - Li, G.

AU - Lu, Q. H.

PY - 2001/12

Y1 - 2001/12

N2 - Lanthanum strontium cobalt La0.5Sr0.5CoO3 (LSCO) films have been grown on Si(1 0 0) substrate by metallorganic chemical liquid deposition (MOCLD) technique using lanthanum acetate, strontium acetate and cobalt acetate as the starting materials. The technique simplified the preparation of LSCO thin films by chemical solution routes. The films were crystallized by rapid thermal annealing (RTA) process. The films annealed between 600°C and 750°C are entirely in the perovskite phase and show good conductivity. The lowest resistivity (950 μΩ cm) thin films were obtained by annealing at 750°C. The size effect of sheet resistance of the LSCO films has been discussed. PbZr0.5Ti0.5O3 (PZT) films deposited onto LSCO films displayed a good P-E hysteresis characteristic.

AB - Lanthanum strontium cobalt La0.5Sr0.5CoO3 (LSCO) films have been grown on Si(1 0 0) substrate by metallorganic chemical liquid deposition (MOCLD) technique using lanthanum acetate, strontium acetate and cobalt acetate as the starting materials. The technique simplified the preparation of LSCO thin films by chemical solution routes. The films were crystallized by rapid thermal annealing (RTA) process. The films annealed between 600°C and 750°C are entirely in the perovskite phase and show good conductivity. The lowest resistivity (950 μΩ cm) thin films were obtained by annealing at 750°C. The size effect of sheet resistance of the LSCO films has been discussed. PbZr0.5Ti0.5O3 (PZT) films deposited onto LSCO films displayed a good P-E hysteresis characteristic.

KW - A1. X-ray diffraction

KW - B1. perovskites

KW - B2. oxide superconducting materials

UR - https://www.scopus.com/pages/publications/0035546584

U2 - 10.1016/S0022-0248(01)01603-7

DO - 10.1016/S0022-0248(01)01603-7

M3 - 文章

AN - SCOPUS:0035546584

SN - 0022-0248

VL - 233

SP - 512

EP - 516

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 3

ER -

Preparation and properties of lanthanum strontium cobalt films on Si(1 0 0) by metallorganic chemical liquid deposition

Abstract

Keywords

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