Preparation and properties of CaCu3Ti4O12 thin film grown on LaNiO3-coated silicon by sol-gel process

Y. W. Li; Z. G. Hu; J. L. Sun; X. J. Meng; J. H. Chu

doi:10.1016/j.jcrysgro.2007.11.025

Preparation and properties of CaCu₃Ti₄O₁₂ thin film grown on LaNiO₃-coated silicon by sol-gel process

Y. W. Li^*
, Z. G. Hu
, J. L. Sun
, X. J. Meng
, J. H. Chu

^*Corresponding author for this work

School of Physics and Electronic Science

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

CaCu₃Ti₄O₁₂ (CCTO) thin film was prepared on LaNiO₃ (LNO)-coated silicon substrate by a sol-gel process. The CCTO sample is perovskite structure without any detectable impurities. Compared with the films grown on platinum (Pt), the CCTO thin film on LNO exhibits the (4 0 0) preferential orientation. It may be due to the LNO acts as seed layer during the growth of the CCTO film. It is indicated that the dielectric loss of CCTO thin film on LNO is lower than that of the films on Pt. The dielectric response of CCTO thin film on LNO can be described with the Debye relaxation model subjoining the contribution of conductance and diffusion effect.

Original language	English
Pages (from-to)	378-381
Number of pages	4
Journal	Journal of Crystal Growth
Volume	310
Issue number	2
DOIs	https://doi.org/10.1016/j.jcrysgro.2007.11.025
State	Published - 15 Jan 2008

Keywords

A3. Polycrystalline deposition
B1. Perovskites
B1. Titanium compounds
B2. Dielectric materials

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10.1016/j.jcrysgro.2007.11.025

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title = "Preparation and properties of CaCu3Ti4O12 thin film grown on LaNiO3-coated silicon by sol-gel process",

abstract = "CaCu3Ti4O12 (CCTO) thin film was prepared on LaNiO3 (LNO)-coated silicon substrate by a sol-gel process. The CCTO sample is perovskite structure without any detectable impurities. Compared with the films grown on platinum (Pt), the CCTO thin film on LNO exhibits the (4 0 0) preferential orientation. It may be due to the LNO acts as seed layer during the growth of the CCTO film. It is indicated that the dielectric loss of CCTO thin film on LNO is lower than that of the films on Pt. The dielectric response of CCTO thin film on LNO can be described with the Debye relaxation model subjoining the contribution of conductance and diffusion effect.",

keywords = "A3. Polycrystalline deposition, B1. Perovskites, B1. Titanium compounds, B2. Dielectric materials",

author = "Li, \{Y. W.\} and Hu, \{Z. G.\} and Sun, \{J. L.\} and Meng, \{X. J.\} and Chu, \{J. H.\}",

year = "2008",

month = jan,

day = "15",

doi = "10.1016/j.jcrysgro.2007.11.025",

language = "英语",

volume = "310",

pages = "378--381",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

number = "2",

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TY - JOUR

T1 - Preparation and properties of CaCu3Ti4O12 thin film grown on LaNiO3-coated silicon by sol-gel process

AU - Li, Y. W.

AU - Hu, Z. G.

AU - Sun, J. L.

AU - Meng, X. J.

AU - Chu, J. H.

PY - 2008/1/15

Y1 - 2008/1/15

N2 - CaCu3Ti4O12 (CCTO) thin film was prepared on LaNiO3 (LNO)-coated silicon substrate by a sol-gel process. The CCTO sample is perovskite structure without any detectable impurities. Compared with the films grown on platinum (Pt), the CCTO thin film on LNO exhibits the (4 0 0) preferential orientation. It may be due to the LNO acts as seed layer during the growth of the CCTO film. It is indicated that the dielectric loss of CCTO thin film on LNO is lower than that of the films on Pt. The dielectric response of CCTO thin film on LNO can be described with the Debye relaxation model subjoining the contribution of conductance and diffusion effect.

AB - CaCu3Ti4O12 (CCTO) thin film was prepared on LaNiO3 (LNO)-coated silicon substrate by a sol-gel process. The CCTO sample is perovskite structure without any detectable impurities. Compared with the films grown on platinum (Pt), the CCTO thin film on LNO exhibits the (4 0 0) preferential orientation. It may be due to the LNO acts as seed layer during the growth of the CCTO film. It is indicated that the dielectric loss of CCTO thin film on LNO is lower than that of the films on Pt. The dielectric response of CCTO thin film on LNO can be described with the Debye relaxation model subjoining the contribution of conductance and diffusion effect.

KW - A3. Polycrystalline deposition

KW - B1. Perovskites

KW - B1. Titanium compounds

KW - B2. Dielectric materials

UR - https://www.scopus.com/pages/publications/37549006042

U2 - 10.1016/j.jcrysgro.2007.11.025

DO - 10.1016/j.jcrysgro.2007.11.025

M3 - 文章

AN - SCOPUS:37549006042

SN - 0022-0248

VL - 310

SP - 378

EP - 381

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 2

ER -

Preparation and properties of CaCu₃Ti₄O₁₂ thin film grown on LaNiO₃-coated silicon by sol-gel process

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Keywords

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