Preparation and properties of Bi2Ti2O7 thin films by chemical solution deposition

Zhuobing Xiao; Xianming Wu; Shaowei Wang; Hong Wang; Zhuo Wang; Shuxia Shan; Min Wang

doi:10.1016/S0025-5408(01)00676-6

Preparation and properties of Bi₂Ti₂O₇ thin films by chemical solution deposition

Zhuobing Xiao, Xianming Wu, Shaowei Wang, Hong Wang, Zhuo Wang, Shuxia Shan, Min Wang

Research output: Contribution to journal › Article › peer-review

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Abstract

Homogeneous and crack-free Bi₂Ti₂O₇ thin films with strong (111) orientation were successfully prepared on n-type Si (100) substrates by chemical solution deposition. Bismuth nitrate and titanium butoxide were used as starting materials. The crystallization temperature is relatively low and about 500°C. The insulating and dielectric properties were found to be dependent on the annealing temperature. The dielectric constant was 115.5 at 100 kHz at room temperature, and the leakage current density was 3.48 × 10^-7 A/cm² at an applied voltage of 15 V (375 kV/cm) for 0.4 μm-thick films annealed at 500°C for 30 min.

Original language	English
Pages (from-to)	1949-1956
Number of pages	8
Journal	Materials Research Bulletin
Volume	36
Issue number	11
DOIs	https://doi.org/10.1016/S0025-5408(01)00676-6
State	Published - 15 Sep 2001
Externally published	Yes

Keywords

A. thin films
B. X-ray diffraction
B. thermogravimetric analysis
D. dielectric properties

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10.1016/S0025-5408(01)00676-6

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title = "Preparation and properties of Bi2Ti2O7 thin films by chemical solution deposition",

abstract = "Homogeneous and crack-free Bi2Ti2O7 thin films with strong (111) orientation were successfully prepared on n-type Si (100) substrates by chemical solution deposition. Bismuth nitrate and titanium butoxide were used as starting materials. The crystallization temperature is relatively low and about 500°C. The insulating and dielectric properties were found to be dependent on the annealing temperature. The dielectric constant was 115.5 at 100 kHz at room temperature, and the leakage current density was 3.48 × 10-7 A/cm2 at an applied voltage of 15 V (375 kV/cm) for 0.4 μm-thick films annealed at 500°C for 30 min.",

keywords = "A. thin films, B. X-ray diffraction, B. thermogravimetric analysis, D. dielectric properties",

author = "Zhuobing Xiao and Xianming Wu and Shaowei Wang and Hong Wang and Zhuo Wang and Shuxia Shan and Min Wang",

year = "2001",

month = sep,

day = "15",

doi = "10.1016/S0025-5408(01)00676-6",

language = "英语",

volume = "36",

pages = "1949--1956",

journal = "Materials Research Bulletin",

issn = "0025-5408",

publisher = "Elsevier Ltd",

number = "11",

}

TY - JOUR

T1 - Preparation and properties of Bi2Ti2O7 thin films by chemical solution deposition

AU - Xiao, Zhuobing

AU - Wu, Xianming

AU - Wang, Shaowei

AU - Wang, Hong

AU - Wang, Zhuo

AU - Shan, Shuxia

AU - Wang, Min

PY - 2001/9/15

Y1 - 2001/9/15

N2 - Homogeneous and crack-free Bi2Ti2O7 thin films with strong (111) orientation were successfully prepared on n-type Si (100) substrates by chemical solution deposition. Bismuth nitrate and titanium butoxide were used as starting materials. The crystallization temperature is relatively low and about 500°C. The insulating and dielectric properties were found to be dependent on the annealing temperature. The dielectric constant was 115.5 at 100 kHz at room temperature, and the leakage current density was 3.48 × 10-7 A/cm2 at an applied voltage of 15 V (375 kV/cm) for 0.4 μm-thick films annealed at 500°C for 30 min.

AB - Homogeneous and crack-free Bi2Ti2O7 thin films with strong (111) orientation were successfully prepared on n-type Si (100) substrates by chemical solution deposition. Bismuth nitrate and titanium butoxide were used as starting materials. The crystallization temperature is relatively low and about 500°C. The insulating and dielectric properties were found to be dependent on the annealing temperature. The dielectric constant was 115.5 at 100 kHz at room temperature, and the leakage current density was 3.48 × 10-7 A/cm2 at an applied voltage of 15 V (375 kV/cm) for 0.4 μm-thick films annealed at 500°C for 30 min.

KW - A. thin films

KW - B. X-ray diffraction

KW - B. thermogravimetric analysis

KW - D. dielectric properties

UR - https://www.scopus.com/pages/publications/0035885418

U2 - 10.1016/S0025-5408(01)00676-6

DO - 10.1016/S0025-5408(01)00676-6

M3 - 文章

AN - SCOPUS:0035885418

SN - 0025-5408

VL - 36

SP - 1949

EP - 1956

JO - Materials Research Bulletin

JF - Materials Research Bulletin

IS - 11

ER -

Preparation and properties of Bi₂Ti₂O₇ thin films by chemical solution deposition

Abstract

Keywords

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