Preparation and ferroelectric properties of freestanding Pb(Zr,Ti)O 3 thin membranes

Zhenghu Zuo; Bin Chen; Qing Feng Zhan; Yiwei Liu; Huali Yang; Zhixiang Li; Gaojie Xu; Run Wei Li

doi:10.1088/0022-3727/45/18/185302

Preparation and ferroelectric properties of freestanding Pb(Zr,Ti)O ₃ thin membranes

Zhenghu Zuo
, Bin Chen
, Qing Feng Zhan^*
, Yiwei Liu
, Huali Yang
, Zhixiang Li
, Gaojie Xu
, Run Wei Li

^*Corresponding author for this work

CAS - Ningbo Institute of Material Technology and Engineering

Research output: Contribution to journal › Article › peer-review

24 Scopus citations

Abstract

Freestanding Pb(Zr,Ti)O ₃ (PZT) thin membranes were fabricated by pulsed laser deposition on 200nm-thick Pt foils which were obtained by etching the platinized Si substrates with HF solutions. X-ray diffraction patterns and Raman spectra show that the crystal lattice distortion of the PZT membranes is relaxed after removing the rigid substrates. Compared with the substrate-clamped PZT films, the saturation polarization and the remanent polarization of the freestanding PZT membranes are increased by about 18% and 21%, respectively. In addition, the freestanding PZT thin membranes possess higher dielectric tunability and larger domain size. The novel facile fabrication method is important for developing flexible ferroelectric devices and also for studying the strain effects on the physical properties of flexible functional membranes.

Original language	English
Article number	185302
Journal	Journal of Physics D: Applied Physics
Volume	45
Issue number	18
DOIs	https://doi.org/10.1088/0022-3727/45/18/185302
State	Published - 9 May 2012
Externally published	Yes

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title = "Preparation and ferroelectric properties of freestanding Pb(Zr,Ti)O 3 thin membranes",

abstract = "Freestanding Pb(Zr,Ti)O 3 (PZT) thin membranes were fabricated by pulsed laser deposition on 200nm-thick Pt foils which were obtained by etching the platinized Si substrates with HF solutions. X-ray diffraction patterns and Raman spectra show that the crystal lattice distortion of the PZT membranes is relaxed after removing the rigid substrates. Compared with the substrate-clamped PZT films, the saturation polarization and the remanent polarization of the freestanding PZT membranes are increased by about 18\% and 21\%, respectively. In addition, the freestanding PZT thin membranes possess higher dielectric tunability and larger domain size. The novel facile fabrication method is important for developing flexible ferroelectric devices and also for studying the strain effects on the physical properties of flexible functional membranes.",

author = "Zhenghu Zuo and Bin Chen and Zhan, \{Qing Feng\} and Yiwei Liu and Huali Yang and Zhixiang Li and Gaojie Xu and Li, \{Run Wei\}",

year = "2012",

month = may,

day = "9",

doi = "10.1088/0022-3727/45/18/185302",

language = "英语",

volume = "45",

journal = "Journal of Physics D: Applied Physics",

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TY - JOUR

T1 - Preparation and ferroelectric properties of freestanding Pb(Zr,Ti)O 3 thin membranes

AU - Zuo, Zhenghu

AU - Chen, Bin

AU - Zhan, Qing Feng

AU - Liu, Yiwei

AU - Yang, Huali

AU - Li, Zhixiang

AU - Xu, Gaojie

AU - Li, Run Wei

PY - 2012/5/9

Y1 - 2012/5/9

N2 - Freestanding Pb(Zr,Ti)O 3 (PZT) thin membranes were fabricated by pulsed laser deposition on 200nm-thick Pt foils which were obtained by etching the platinized Si substrates with HF solutions. X-ray diffraction patterns and Raman spectra show that the crystal lattice distortion of the PZT membranes is relaxed after removing the rigid substrates. Compared with the substrate-clamped PZT films, the saturation polarization and the remanent polarization of the freestanding PZT membranes are increased by about 18% and 21%, respectively. In addition, the freestanding PZT thin membranes possess higher dielectric tunability and larger domain size. The novel facile fabrication method is important for developing flexible ferroelectric devices and also for studying the strain effects on the physical properties of flexible functional membranes.

AB - Freestanding Pb(Zr,Ti)O 3 (PZT) thin membranes were fabricated by pulsed laser deposition on 200nm-thick Pt foils which were obtained by etching the platinized Si substrates with HF solutions. X-ray diffraction patterns and Raman spectra show that the crystal lattice distortion of the PZT membranes is relaxed after removing the rigid substrates. Compared with the substrate-clamped PZT films, the saturation polarization and the remanent polarization of the freestanding PZT membranes are increased by about 18% and 21%, respectively. In addition, the freestanding PZT thin membranes possess higher dielectric tunability and larger domain size. The novel facile fabrication method is important for developing flexible ferroelectric devices and also for studying the strain effects on the physical properties of flexible functional membranes.

UR - https://www.scopus.com/pages/publications/84859794935

U2 - 10.1088/0022-3727/45/18/185302

DO - 10.1088/0022-3727/45/18/185302

M3 - 文章

AN - SCOPUS:84859794935

SN - 0022-3727

VL - 45

JO - Journal of Physics D: Applied Physics

JF - Journal of Physics D: Applied Physics

IS - 18

M1 - 185302

ER -

Preparation and ferroelectric properties of freestanding Pb(Zr,Ti)O ₃ thin membranes

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