Preparation and characterization of Pt/MgO/Si multilayer thin films

Jiangong Cheng; Xiangjian Meng; Pingxong Yang; Junhao Chu

doi:10.1016/S0022-0248(98)00613-7

Preparation and characterization of Pt/MgO/Si multilayer thin films

Jiangong Cheng^*
, Xiangjian Meng
, Pingxong Yang
, Junhao Chu

^*Corresponding author for this work

CAS - Shanghai Institute of Technical Physics

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

High-quality multilayer thin films of Pt(1 1 1)/MgO(1 0 0)/Si have been prepared for the first time, Single (1 0 0) oriented MgO thin films were successfully deposited by atmospheric pressure metalorganic chemical vapor deposition, and Pt thin films were fabricated by DC sputtering. The relationships between the annealing conditions and the crystallinity as well as the orientations have been studied by X-ray diffraction. The highly preferred (1 1 1) oriented Pt thin films have been obtained after annealing at 500°C for 60 min. The surface and interface diffusion of the Pt/MgO/Si multilayer thin films were also investigated using scanning electron microscopy and Auger electron spectroscopy. No remarkable interdiffusion at both interfaces of the Pt/MgO/Si multilayer thin films was found.

Original language	English
Pages (from-to)	89-93
Number of pages	5
Journal	Journal of Crystal Growth
Volume	194
Issue number	1
DOIs	https://doi.org/10.1016/S0022-0248(98)00613-7
State	Published - 1 Nov 1998
Externally published	Yes

Keywords

AP-MOCVD
Crystal orientation
DC-sputtering
Pt/MgO/Si multilayer thin films

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10.1016/S0022-0248(98)00613-7

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title = "Preparation and characterization of Pt/MgO/Si multilayer thin films",

abstract = "High-quality multilayer thin films of Pt(1 1 1)/MgO(1 0 0)/Si have been prepared for the first time, Single (1 0 0) oriented MgO thin films were successfully deposited by atmospheric pressure metalorganic chemical vapor deposition, and Pt thin films were fabricated by DC sputtering. The relationships between the annealing conditions and the crystallinity as well as the orientations have been studied by X-ray diffraction. The highly preferred (1 1 1) oriented Pt thin films have been obtained after annealing at 500°C for 60 min. The surface and interface diffusion of the Pt/MgO/Si multilayer thin films were also investigated using scanning electron microscopy and Auger electron spectroscopy. No remarkable interdiffusion at both interfaces of the Pt/MgO/Si multilayer thin films was found.",

keywords = "AP-MOCVD, Crystal orientation, DC-sputtering, Pt/MgO/Si multilayer thin films",

author = "Jiangong Cheng and Xiangjian Meng and Pingxong Yang and Junhao Chu",

year = "1998",

month = nov,

day = "1",

doi = "10.1016/S0022-0248(98)00613-7",

language = "英语",

volume = "194",

pages = "89--93",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

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}

TY - JOUR

T1 - Preparation and characterization of Pt/MgO/Si multilayer thin films

AU - Cheng, Jiangong

AU - Meng, Xiangjian

AU - Yang, Pingxong

AU - Chu, Junhao

PY - 1998/11/1

Y1 - 1998/11/1

N2 - High-quality multilayer thin films of Pt(1 1 1)/MgO(1 0 0)/Si have been prepared for the first time, Single (1 0 0) oriented MgO thin films were successfully deposited by atmospheric pressure metalorganic chemical vapor deposition, and Pt thin films were fabricated by DC sputtering. The relationships between the annealing conditions and the crystallinity as well as the orientations have been studied by X-ray diffraction. The highly preferred (1 1 1) oriented Pt thin films have been obtained after annealing at 500°C for 60 min. The surface and interface diffusion of the Pt/MgO/Si multilayer thin films were also investigated using scanning electron microscopy and Auger electron spectroscopy. No remarkable interdiffusion at both interfaces of the Pt/MgO/Si multilayer thin films was found.

AB - High-quality multilayer thin films of Pt(1 1 1)/MgO(1 0 0)/Si have been prepared for the first time, Single (1 0 0) oriented MgO thin films were successfully deposited by atmospheric pressure metalorganic chemical vapor deposition, and Pt thin films were fabricated by DC sputtering. The relationships between the annealing conditions and the crystallinity as well as the orientations have been studied by X-ray diffraction. The highly preferred (1 1 1) oriented Pt thin films have been obtained after annealing at 500°C for 60 min. The surface and interface diffusion of the Pt/MgO/Si multilayer thin films were also investigated using scanning electron microscopy and Auger electron spectroscopy. No remarkable interdiffusion at both interfaces of the Pt/MgO/Si multilayer thin films was found.

KW - AP-MOCVD

KW - Crystal orientation

KW - DC-sputtering

KW - Pt/MgO/Si multilayer thin films

UR - https://www.scopus.com/pages/publications/0032206910

U2 - 10.1016/S0022-0248(98)00613-7

DO - 10.1016/S0022-0248(98)00613-7

M3 - 文章

AN - SCOPUS:0032206910

SN - 0022-0248

VL - 194

SP - 89

EP - 93

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1

ER -

Preparation and characterization of Pt/MgO/Si multilayer thin films

Abstract

Keywords

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