TY - JOUR
T1 - Preparation and characterization of MoO3 hole-injection layer for organic solar cell fabrication and optimization
AU - Wang, Guojie
AU - Jiu, Tonggang
AU - Li, Pandeng
AU - Li, Jun
AU - Sun, Chunming
AU - Lu, Fushen
AU - Fang, Junfeng
PY - 2014/1
Y1 - 2014/1
N2 - A facile, solution-processed method to fabricate MoO3 (s-MoO3) thin film as hole-injection layer (HIL) for poly(3-hexylthiophene) (P3HT) and (6,6)-phenyl-C61-butyric acid methyl ester (PC61BM) based organic bulk hetero-junction photovoltaics is presented. The structural, electronic property and surface microstructure of the s-MoO3 thin film are investigated in detail by X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy, scanning electron microscopy and atomic force microscope. The results indicate that the s-MoO3 thin film possesses appropriate morphological, optical and electronic properties to be suitable for organic photovoltaic applications. The photovoltaic devices have been investigated and optimized in detail by tuning layer thickness, processing temperature and time, annealing conditions of interfacial layers. Using s-MoO3 thin film as hole-injection layer, the device gives open circuit voltage of 0.64 V, circuit current density of 9.15 mA cm-2, fill factor of 0.67 and power conversion efficiency of 3.92%, which is higher than the controlled device using PEDOT:PSS layer. In addition, the s-MoO3 based devices exhibit good stability.
AB - A facile, solution-processed method to fabricate MoO3 (s-MoO3) thin film as hole-injection layer (HIL) for poly(3-hexylthiophene) (P3HT) and (6,6)-phenyl-C61-butyric acid methyl ester (PC61BM) based organic bulk hetero-junction photovoltaics is presented. The structural, electronic property and surface microstructure of the s-MoO3 thin film are investigated in detail by X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy, scanning electron microscopy and atomic force microscope. The results indicate that the s-MoO3 thin film possesses appropriate morphological, optical and electronic properties to be suitable for organic photovoltaic applications. The photovoltaic devices have been investigated and optimized in detail by tuning layer thickness, processing temperature and time, annealing conditions of interfacial layers. Using s-MoO3 thin film as hole-injection layer, the device gives open circuit voltage of 0.64 V, circuit current density of 9.15 mA cm-2, fill factor of 0.67 and power conversion efficiency of 3.92%, which is higher than the controlled device using PEDOT:PSS layer. In addition, the s-MoO3 based devices exhibit good stability.
KW - Characterization
KW - Hole-injection layer
KW - MoO
KW - Organic photovoltaics
KW - Solution-processed
UR - https://www.scopus.com/pages/publications/84889102452
U2 - 10.1016/j.solmat.2013.10.002
DO - 10.1016/j.solmat.2013.10.002
M3 - 文章
AN - SCOPUS:84889102452
SN - 0927-0248
VL - 120
SP - 603
EP - 609
JO - Solar Energy Materials and Solar Cells
JF - Solar Energy Materials and Solar Cells
IS - PART B
ER -
