Preparation and characterization of Bi-doped LuFeO3 thin films grown on LaNiO3 substrate

Liping Zhu; Hongmei Deng; Jian Liu; Lin Sun; Pingxiong Yang; Anquan Jiang; Junhao Chu

doi:10.1016/j.jcrysgro.2013.10.039

Preparation and characterization of Bi-doped LuFeO₃ thin films grown on LaNiO₃ substrate

Liping Zhu
, Hongmei Deng
, Jian Liu
, Lin Sun
, Pingxiong Yang^*
, Anquan Jiang
, Junhao Chu

^*Corresponding author for this work

School of Physics and Electronic Science

East China Normal University
Shanghai University
Fudan University

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

The multiferroic thin films of Lu_1-xBi_xFeO ₃ (LBFOx, 0≤x≤0.10) were firstly prepared on LaNiO₃ coating silicon substrates by the sol-gel method. Structural and morphological characterization of the LBFOx thin films was investigated by X-ray diffraction and atomic force microscopy, respectively. The remnant polarization of Bi-doped LuFeO₃ thin film at room temperature reached to 3.1 and 3.6 μC/cm² for x=0.05 and 0.10 at the electric field of 700 kV/cm, respectively. The ferroelectric polarization measurements indicate that the potential role of Bi doping in increasing the value of the polarization of LuFeO₃ film, and the mechanisms for the U shaped frequency loss tangent curves was discussed.

Original language	English
Pages (from-to)	6-9
Number of pages	4
Journal	Journal of Crystal Growth
Volume	387
DOIs	https://doi.org/10.1016/j.jcrysgro.2013.10.039
State	Published - 2014

Keywords

A3. Polycrystalline deposition
B1. Perovskite
B2. Dielectric material
B2. Ferroelectric materials

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10.1016/j.jcrysgro.2013.10.039

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title = "Preparation and characterization of Bi-doped LuFeO3 thin films grown on LaNiO3 substrate",

abstract = "The multiferroic thin films of Lu1-xBixFeO 3 (LBFOx, 0≤x≤0.10) were firstly prepared on LaNiO3 coating silicon substrates by the sol-gel method. Structural and morphological characterization of the LBFOx thin films was investigated by X-ray diffraction and atomic force microscopy, respectively. The remnant polarization of Bi-doped LuFeO3 thin film at room temperature reached to 3.1 and 3.6 μC/cm2 for x=0.05 and 0.10 at the electric field of 700 kV/cm, respectively. The ferroelectric polarization measurements indicate that the potential role of Bi doping in increasing the value of the polarization of LuFeO3 film, and the mechanisms for the U shaped frequency loss tangent curves was discussed.",

keywords = "A3. Polycrystalline deposition, B1. Perovskite, B2. Dielectric material, B2. Ferroelectric materials",

author = "Liping Zhu and Hongmei Deng and Jian Liu and Lin Sun and Pingxiong Yang and Anquan Jiang and Junhao Chu",

year = "2014",

doi = "10.1016/j.jcrysgro.2013.10.039",

language = "英语",

volume = "387",

pages = "6--9",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Preparation and characterization of Bi-doped LuFeO3 thin films grown on LaNiO3 substrate

AU - Zhu, Liping

AU - Deng, Hongmei

AU - Liu, Jian

AU - Sun, Lin

AU - Yang, Pingxiong

AU - Jiang, Anquan

AU - Chu, Junhao

PY - 2014

Y1 - 2014

N2 - The multiferroic thin films of Lu1-xBixFeO 3 (LBFOx, 0≤x≤0.10) were firstly prepared on LaNiO3 coating silicon substrates by the sol-gel method. Structural and morphological characterization of the LBFOx thin films was investigated by X-ray diffraction and atomic force microscopy, respectively. The remnant polarization of Bi-doped LuFeO3 thin film at room temperature reached to 3.1 and 3.6 μC/cm2 for x=0.05 and 0.10 at the electric field of 700 kV/cm, respectively. The ferroelectric polarization measurements indicate that the potential role of Bi doping in increasing the value of the polarization of LuFeO3 film, and the mechanisms for the U shaped frequency loss tangent curves was discussed.

AB - The multiferroic thin films of Lu1-xBixFeO 3 (LBFOx, 0≤x≤0.10) were firstly prepared on LaNiO3 coating silicon substrates by the sol-gel method. Structural and morphological characterization of the LBFOx thin films was investigated by X-ray diffraction and atomic force microscopy, respectively. The remnant polarization of Bi-doped LuFeO3 thin film at room temperature reached to 3.1 and 3.6 μC/cm2 for x=0.05 and 0.10 at the electric field of 700 kV/cm, respectively. The ferroelectric polarization measurements indicate that the potential role of Bi doping in increasing the value of the polarization of LuFeO3 film, and the mechanisms for the U shaped frequency loss tangent curves was discussed.

KW - A3. Polycrystalline deposition

KW - B1. Perovskite

KW - B2. Dielectric material

KW - B2. Ferroelectric materials

UR - https://www.scopus.com/pages/publications/84887732349

U2 - 10.1016/j.jcrysgro.2013.10.039

DO - 10.1016/j.jcrysgro.2013.10.039

M3 - 文章

AN - SCOPUS:84887732349

SN - 0022-0248

VL - 387

SP - 6

EP - 9

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -

Preparation and characterization of Bi-doped LuFeO₃ thin films grown on LaNiO₃ substrate

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Keywords

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