TY - JOUR
T1 - Preparation and characterization of Bi-doped LuFeO3 thin films grown on LaNiO3 substrate
AU - Zhu, Liping
AU - Deng, Hongmei
AU - Liu, Jian
AU - Sun, Lin
AU - Yang, Pingxiong
AU - Jiang, Anquan
AU - Chu, Junhao
PY - 2014
Y1 - 2014
N2 - The multiferroic thin films of Lu1-xBixFeO 3 (LBFOx, 0≤x≤0.10) were firstly prepared on LaNiO3 coating silicon substrates by the sol-gel method. Structural and morphological characterization of the LBFOx thin films was investigated by X-ray diffraction and atomic force microscopy, respectively. The remnant polarization of Bi-doped LuFeO3 thin film at room temperature reached to 3.1 and 3.6 μC/cm2 for x=0.05 and 0.10 at the electric field of 700 kV/cm, respectively. The ferroelectric polarization measurements indicate that the potential role of Bi doping in increasing the value of the polarization of LuFeO3 film, and the mechanisms for the U shaped frequency loss tangent curves was discussed.
AB - The multiferroic thin films of Lu1-xBixFeO 3 (LBFOx, 0≤x≤0.10) were firstly prepared on LaNiO3 coating silicon substrates by the sol-gel method. Structural and morphological characterization of the LBFOx thin films was investigated by X-ray diffraction and atomic force microscopy, respectively. The remnant polarization of Bi-doped LuFeO3 thin film at room temperature reached to 3.1 and 3.6 μC/cm2 for x=0.05 and 0.10 at the electric field of 700 kV/cm, respectively. The ferroelectric polarization measurements indicate that the potential role of Bi doping in increasing the value of the polarization of LuFeO3 film, and the mechanisms for the U shaped frequency loss tangent curves was discussed.
KW - A3. Polycrystalline deposition
KW - B1. Perovskite
KW - B2. Dielectric material
KW - B2. Ferroelectric materials
UR - https://www.scopus.com/pages/publications/84887732349
U2 - 10.1016/j.jcrysgro.2013.10.039
DO - 10.1016/j.jcrysgro.2013.10.039
M3 - 文章
AN - SCOPUS:84887732349
SN - 0022-0248
VL - 387
SP - 6
EP - 9
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
ER -