Potential model for the subband structures in the inversion layer of narrow-gap semiconductor heterostructures

Kun Liu; J. H. Chu; L. J. Wu; H. J. Ou; D. Y. Tang

doi:10.1063/1.361378

Potential model for the subband structures in the inversion layer of narrow-gap semiconductor heterostructures

Kun Liu^*
, J. H. Chu
, L. J. Wu
, H. J. Ou
, D. Y. Tang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

Based on the capacitance-voltage (CV) characteristics of semiconductor metal-insulator-semiconductor (MIS) heterostructures and the nonparabolic characteristics of narrow-gap semiconductors (NGSs), a surface potential model has been developed to derive subband structures of two-dimensional electron gas systems in an inversion layer of NGS MIS heterostructures. CV measurement was also performed on a p-type InSb MIS heterostructure, and two onsets of electron filling more than one subband were observed. Subband structures were also obtained using the presented potential model.

Original language	English
Pages (from-to)	3608-3610
Number of pages	3
Journal	Journal of Applied Physics
Volume	79
Issue number	7
DOIs	https://doi.org/10.1063/1.361378
State	Published - 1 Apr 1996
Externally published	Yes

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title = "Potential model for the subband structures in the inversion layer of narrow-gap semiconductor heterostructures",

abstract = "Based on the capacitance-voltage (CV) characteristics of semiconductor metal-insulator-semiconductor (MIS) heterostructures and the nonparabolic characteristics of narrow-gap semiconductors (NGSs), a surface potential model has been developed to derive subband structures of two-dimensional electron gas systems in an inversion layer of NGS MIS heterostructures. CV measurement was also performed on a p-type InSb MIS heterostructure, and two onsets of electron filling more than one subband were observed. Subband structures were also obtained using the presented potential model.",

author = "Kun Liu and Chu, \{J. H.\} and Wu, \{L. J.\} and Ou, \{H. J.\} and Tang, \{D. Y.\}",

year = "1996",

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doi = "10.1063/1.361378",

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T1 - Potential model for the subband structures in the inversion layer of narrow-gap semiconductor heterostructures

AU - Liu, Kun

AU - Chu, J. H.

AU - Wu, L. J.

AU - Ou, H. J.

AU - Tang, D. Y.

PY - 1996/4/1

Y1 - 1996/4/1

N2 - Based on the capacitance-voltage (CV) characteristics of semiconductor metal-insulator-semiconductor (MIS) heterostructures and the nonparabolic characteristics of narrow-gap semiconductors (NGSs), a surface potential model has been developed to derive subband structures of two-dimensional electron gas systems in an inversion layer of NGS MIS heterostructures. CV measurement was also performed on a p-type InSb MIS heterostructure, and two onsets of electron filling more than one subband were observed. Subband structures were also obtained using the presented potential model.

AB - Based on the capacitance-voltage (CV) characteristics of semiconductor metal-insulator-semiconductor (MIS) heterostructures and the nonparabolic characteristics of narrow-gap semiconductors (NGSs), a surface potential model has been developed to derive subband structures of two-dimensional electron gas systems in an inversion layer of NGS MIS heterostructures. CV measurement was also performed on a p-type InSb MIS heterostructure, and two onsets of electron filling more than one subband were observed. Subband structures were also obtained using the presented potential model.

UR - https://www.scopus.com/pages/publications/5244337029

U2 - 10.1063/1.361378

DO - 10.1063/1.361378

M3 - 文章

AN - SCOPUS:5244337029

SN - 0021-8979

VL - 79

SP - 3608

EP - 3610

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 7

ER -

Potential model for the subband structures in the inversion layer of narrow-gap semiconductor heterostructures

Abstract

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