Post-treating techniques of porous silicon thin film

Ziqiang Zhu; Yongfu Long; Shaoqiang Chen; Xianwen Yu; Jianzhong Zhu

doi:10.1117/12.608166

Post-treating techniques of porous silicon thin film

Ziqiang Zhu^*
, Yongfu Long
, Shaoqiang Chen
, Xianwen Yu
, Jianzhong Zhu

^*Corresponding author for this work

School of Communication and Electronic Engineering

East China Normal University

Research output: Contribution to journal › Conference article › peer-review

Abstract

An effective and simple novel technique for post-treating of PS films has been developed. The post treatment technique can avoid the cracking of PS films and enhance the stability, the surface smoothness and the mechanical intensity of the PS films, resulting in the expansion of application of the PS films.

Original language	English
Article number	102
Pages (from-to)	438-441
Number of pages	4
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	5774
DOIs	https://doi.org/10.1117/12.608166
State	Published - 2005
Event	Fifth International Conference on Thin Film Physics and Applications - Shanghai, China Duration: 31 May 2004 → 2 Jun 2004

Keywords

Anodization
Cathode reduction
Porous silicon
Post-treatment

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10.1117/12.608166

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@article{9fa319ee213342f7b7ede7a3183109cd,

title = "Post-treating techniques of porous silicon thin film",

abstract = "An effective and simple novel technique for post-treating of PS films has been developed. The post treatment technique can avoid the cracking of PS films and enhance the stability, the surface smoothness and the mechanical intensity of the PS films, resulting in the expansion of application of the PS films.",

keywords = "Anodization, Cathode reduction, Porous silicon, Post-treatment",

author = "Ziqiang Zhu and Yongfu Long and Shaoqiang Chen and Xianwen Yu and Jianzhong Zhu",

year = "2005",

doi = "10.1117/12.608166",

language = "英语",

volume = "5774",

pages = "438--441",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Fifth International Conference on Thin Film Physics and Applications ; Conference date: 31-05-2004 Through 02-06-2004",

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TY - JOUR

T1 - Post-treating techniques of porous silicon thin film

AU - Zhu, Ziqiang

AU - Long, Yongfu

AU - Chen, Shaoqiang

AU - Yu, Xianwen

AU - Zhu, Jianzhong

PY - 2005

Y1 - 2005

N2 - An effective and simple novel technique for post-treating of PS films has been developed. The post treatment technique can avoid the cracking of PS films and enhance the stability, the surface smoothness and the mechanical intensity of the PS films, resulting in the expansion of application of the PS films.

AB - An effective and simple novel technique for post-treating of PS films has been developed. The post treatment technique can avoid the cracking of PS films and enhance the stability, the surface smoothness and the mechanical intensity of the PS films, resulting in the expansion of application of the PS films.

KW - Anodization

KW - Cathode reduction

KW - Porous silicon

KW - Post-treatment

UR - https://www.scopus.com/pages/publications/25644451370

U2 - 10.1117/12.608166

DO - 10.1117/12.608166

M3 - 会议文章

AN - SCOPUS:25644451370

SN - 0277-786X

VL - 5774

SP - 438

EP - 441

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

M1 - 102

T2 - Fifth International Conference on Thin Film Physics and Applications

Y2 - 31 May 2004 through 2 June 2004

ER -

Post-treating techniques of porous silicon thin film

Abstract

Keywords

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