Positive magnetoresistance in In0.53Ga0.47As/ In0.52Al0.48As quantum weir

  • Li Yan Shang*
  • , Tie Lin
  • , Wen Zheng Zhou
  • , Dong Lin Li
  • , Hong Ling Gao
  • , Yi Ping Zeng
  • , Shao Ling Guo
  • , Guo Lin Yu
  • , Jun Hao Chu
  • *Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

Magnetotransport measurements have been carried out on In0.53Ga0.47As/ In0.52Al0.48As quantum wells in a temperature range between 1.5 and 77 K. We have observed a large positive magnetoresistance in the low magnetic field range, but saturating in high magnetic fields. The magnetoresistance results from two occupied subbands in the two-dimensional electron gas. With the intersubband scattering considered, we obtained the subband mobility by analyzing the positive magnetoresistance. It is found that the second subband mobility is larger than that of the first due to the existence of the intersubband scattering.

Original languageEnglish
Pages (from-to)5232-5236
Number of pages5
JournalWuli Xuebao/Acta Physica Sinica
Volume57
Issue number8
StatePublished - Aug 2008
Externally publishedYes

Keywords

  • Intersubband scattering
  • Positive magnetoresistance
  • Two-dimensional electron gas

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