PN-junction diode behavior based on polyaniline nanotubes field effect transistor

K. C. Aw; N. Tjitra Salim; Hui Peng; Lijuan Zhang; J. Travas-Sejdic; W. Gao

doi:10.1007/s10854-007-9438-7

PN-junction diode behavior based on polyaniline nanotubes field effect transistor

K. C. Aw^*
, N. Tjitra Salim
, Hui Peng
, Lijuan Zhang
, J. Travas-Sejdic
, W. Gao

^*Corresponding author for this work

The University of Auckland

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Polyaniline (PANI) nanotubes configured as a field effect transistor (FET) exhibits a p-n junction diode behavior. The forward-bias current can be modulated by a gate voltage; turning on at negative gate voltage and turning off at positive gate voltage. An energy band diagram model has been proposed to explain the rectifying effect of the PANI nanotubes FET (PNT-FET). All the four different forward bias conduction mechanisms of a typical p-n junction diode can be identified for this PNT-FET using a semi-log graph to confirm this resemblance.

Original language	English
Pages (from-to)	996-999
Number of pages	4
Journal	Journal of Materials Science: Materials in Electronics
Volume	19
Issue number	10
DOIs	https://doi.org/10.1007/s10854-007-9438-7
State	Published - Oct 2008
Externally published	Yes

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title = "PN-junction diode behavior based on polyaniline nanotubes field effect transistor",

abstract = "Polyaniline (PANI) nanotubes configured as a field effect transistor (FET) exhibits a p-n junction diode behavior. The forward-bias current can be modulated by a gate voltage; turning on at negative gate voltage and turning off at positive gate voltage. An energy band diagram model has been proposed to explain the rectifying effect of the PANI nanotubes FET (PNT-FET). All the four different forward bias conduction mechanisms of a typical p-n junction diode can be identified for this PNT-FET using a semi-log graph to confirm this resemblance.",

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AU - Aw, K. C.

AU - Tjitra Salim, N.

AU - Peng, Hui

AU - Zhang, Lijuan

AU - Travas-Sejdic, J.

AU - Gao, W.

PY - 2008/10

Y1 - 2008/10

N2 - Polyaniline (PANI) nanotubes configured as a field effect transistor (FET) exhibits a p-n junction diode behavior. The forward-bias current can be modulated by a gate voltage; turning on at negative gate voltage and turning off at positive gate voltage. An energy band diagram model has been proposed to explain the rectifying effect of the PANI nanotubes FET (PNT-FET). All the four different forward bias conduction mechanisms of a typical p-n junction diode can be identified for this PNT-FET using a semi-log graph to confirm this resemblance.

AB - Polyaniline (PANI) nanotubes configured as a field effect transistor (FET) exhibits a p-n junction diode behavior. The forward-bias current can be modulated by a gate voltage; turning on at negative gate voltage and turning off at positive gate voltage. An energy band diagram model has been proposed to explain the rectifying effect of the PANI nanotubes FET (PNT-FET). All the four different forward bias conduction mechanisms of a typical p-n junction diode can be identified for this PNT-FET using a semi-log graph to confirm this resemblance.

UR - https://www.scopus.com/pages/publications/46849096031

U2 - 10.1007/s10854-007-9438-7

DO - 10.1007/s10854-007-9438-7

M3 - 文章

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JO - Journal of Materials Science: Materials in Electronics

JF - Journal of Materials Science: Materials in Electronics

IS - 10

ER -

PN-junction diode behavior based on polyaniline nanotubes field effect transistor

Abstract

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