TY - JOUR
T1 - Piezoelectric and ferroelectric properties of SrBi2(Nb1-χTaχ)2O9 ceramics
AU - Sun, Lin
AU - Feng, Chude
AU - Chen, Lidong
AU - Huang, Shiming
AU - Wen, Xiaowei
PY - 2006/11/15
Y1 - 2006/11/15
N2 - SrBi2(Nb1-χTaχ)2O9 (0 ≤ χ ≤ 1.0) bismuth layered structured ferroelectric (BLSF) ceramics were prepared by the conventional solid-state reaction sintering method. XRD analysis indicated that a single phase of SrBi2(Nb1-χTaχ)2O9 was formed for all compositions. The substitution of Ta for Nb decreases Curie temperature (Tc), maximum permittivity (εm), remnant polarization (Pr) and coercive field (Ec), whereas temperature coefficient of resonance frequency (TCF) increases with the increase in Ta content for SrBi2(Nb1-χTaχ)2O9. All of compositions have a low permittivity (εr), a low electromechamical coupling coefficient (Kp) and a high mechanical quality factor (Qm), which are advantageous to be used in piezoelectric resonator device.
AB - SrBi2(Nb1-χTaχ)2O9 (0 ≤ χ ≤ 1.0) bismuth layered structured ferroelectric (BLSF) ceramics were prepared by the conventional solid-state reaction sintering method. XRD analysis indicated that a single phase of SrBi2(Nb1-χTaχ)2O9 was formed for all compositions. The substitution of Ta for Nb decreases Curie temperature (Tc), maximum permittivity (εm), remnant polarization (Pr) and coercive field (Ec), whereas temperature coefficient of resonance frequency (TCF) increases with the increase in Ta content for SrBi2(Nb1-χTaχ)2O9. All of compositions have a low permittivity (εr), a low electromechamical coupling coefficient (Kp) and a high mechanical quality factor (Qm), which are advantageous to be used in piezoelectric resonator device.
KW - Bismuth layer structure ferroelectric
KW - Piezoelectric property
KW - SBN
KW - SBT
UR - https://www.scopus.com/pages/publications/33750351271
U2 - 10.1016/j.mseb.2006.08.034
DO - 10.1016/j.mseb.2006.08.034
M3 - 文章
AN - SCOPUS:33750351271
SN - 0921-5107
VL - 135
SP - 60
EP - 64
JO - Materials Science and Engineering: B
JF - Materials Science and Engineering: B
IS - 1
ER -