Physical mechanism of performance adjustment in selective buried oxide n-MOSFETs

Qin Huang; Renhua Liu; Yabin Sun; Xiaojin Li; Yanling Shi; Changfeng Wang; Duanduan Liao; Ming Tian

doi:10.1007/s11432-018-9791-2

Physical mechanism of performance adjustment in selective buried oxide n-MOSFETs

Qin Huang
, Renhua Liu
, Yabin Sun^*
, Xiaojin Li
, Yanling Shi
, Changfeng Wang
, Duanduan Liao
, Ming Tian

^*Corresponding author for this work

School of Communication and Electronic Engineering

East China Normal University
Shanghai Huali Microelectronics Corporation

Research output: Contribution to journal › Letter › peer-review

1 Scopus citations

Original language	English
Article number	69407
Journal	Science China Information Sciences
Volume	62
Issue number	6
DOIs	https://doi.org/10.1007/s11432-018-9791-2
State	Published - 1 Jun 2019

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@article{bf550e64560246728fbc2293886058f4,

title = "Physical mechanism of performance adjustment in selective buried oxide n-MOSFETs",

author = "Qin Huang and Renhua Liu and Yabin Sun and Xiaojin Li and Yanling Shi and Changfeng Wang and Duanduan Liao and Ming Tian",

year = "2019",

month = jun,

day = "1",

doi = "10.1007/s11432-018-9791-2",

language = "英语",

volume = "62",

journal = "Science China Information Sciences",

issn = "1674-733X",

publisher = "Science China Press ",

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TY - JOUR

T1 - Physical mechanism of performance adjustment in selective buried oxide n-MOSFETs

AU - Huang, Qin

AU - Liu, Renhua

AU - Sun, Yabin

AU - Li, Xiaojin

AU - Shi, Yanling

AU - Wang, Changfeng

AU - Liao, Duanduan

AU - Tian, Ming

PY - 2019/6/1

Y1 - 2019/6/1

UR - https://www.scopus.com/pages/publications/85064205475

U2 - 10.1007/s11432-018-9791-2

DO - 10.1007/s11432-018-9791-2

M3 - 快报

AN - SCOPUS:85064205475

SN - 1674-733X

VL - 62

JO - Science China Information Sciences

JF - Science China Information Sciences

IS - 6

M1 - 69407

ER -

Physical mechanism of performance adjustment in selective buried oxide n-MOSFETs

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