Photoluminescence with ultra-wide spectrum from radiative defects in Si-rich SiNx

  • Weiwei Ke*
  • , Xue Feng
  • , Xuan Tang
  • , Yoshinori Tanaka
  • , Dai Ohnish
  • , Yidong Huang
  • *Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The photoluminescence from the radiative recombination defects in Si-rich SiNx with various Si concentrations was investigated. Due to the Si and N dangling bonds, ultra-wide spectra with full width at halfmaximum of ∼250nm were achieved in visible region.

Original languageEnglish
Title of host publication2009 Asia Communications and Photonics Conference and Exhibition, ACP 2009
StatePublished - 2009
Externally publishedYes
Event2009 Asia Communications and Photonics Conference and Exhibition, ACP 2009 - Shanghai, China
Duration: 2 Nov 20096 Nov 2009

Publication series

Name2009 Asia Communications and Photonics Conference and Exhibition, ACP 2009

Conference

Conference2009 Asia Communications and Photonics Conference and Exhibition, ACP 2009
Country/TerritoryChina
CityShanghai
Period2/11/096/11/09

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